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Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's

Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's
Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's
2027-2033
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e

Mizuta, Hiroshi, Yamaguchi, K. and Takahashi, S. (1987) Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's. IEEE Transactions on Electron Devices, ED-34, 2027-2033.

Record type: Article
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Published date: 1987
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 266252
URI: https://eprints.soton.ac.uk/id/eprint/266252
PURE UUID: 9df19d39-f314-4422-a980-0cfb19edf25b

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Date deposited: 22 Jul 2008 10:56
Last modified: 24 Oct 2017 16:31

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