Transient response analysis of programming/readout characteristics for NEMS memory
Transient response analysis of programming/readout characteristics for NEMS memory
M0430
Nagami, T.
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Tsuchiya, Yoshishige
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Matsuda, S.
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Saito, S.
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Arai, T.
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Shimada, T.
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Mizuta, Hiroshi
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Oda, S.
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June 2008
Nagami, T.
a4433d31-d788-4cf2-b0e3-e67db18ef597
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Matsuda, S.
1075e54e-ee28-49ed-82b0-e06664d2cb5b
Saito, S.
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Arai, T.
7f53022e-dbb2-4eda-b354-71662925bb30
Shimada, T.
a6294be4-3bcc-4436-90e5-70289e2bf523
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Nagami, T., Tsuchiya, Yoshishige, Matsuda, S., Saito, S., Arai, T., Shimada, T., Mizuta, Hiroshi and Oda, S.
(2008)
Transient response analysis of programming/readout characteristics for NEMS memory.
IEEE Silicon Nanoelectronics Workshop, Honolulu.
.
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cpaper_151.pdf
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Published date: June 2008
Additional Information:
Event Dates: June 2008
Venue - Dates:
IEEE Silicon Nanoelectronics Workshop, Honolulu, 2008-06-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266265
URI: http://eprints.soton.ac.uk/id/eprint/266265
PURE UUID: 36903fe0-adeb-42b8-8bac-2314c8a3b4f0
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Date deposited: 23 Jul 2008 09:02
Last modified: 14 Mar 2024 08:24
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Contributors
Author:
T. Nagami
Author:
Yoshishige Tsuchiya
Author:
S. Matsuda
Author:
S. Saito
Author:
T. Arai
Author:
T. Shimada
Author:
Hiroshi Mizuta
Author:
S. Oda
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