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Transient response analysis of programming/readout characteristics for NEMS memory

Transient response analysis of programming/readout characteristics for NEMS memory
Transient response analysis of programming/readout characteristics for NEMS memory
M0430
Nagami, T.
a4433d31-d788-4cf2-b0e3-e67db18ef597
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Matsuda, S.
1075e54e-ee28-49ed-82b0-e06664d2cb5b
Saito, S.
5a819d3c-9621-43ed-83a3-d326c2575e57
Arai, T.
7f53022e-dbb2-4eda-b354-71662925bb30
Shimada, T.
a6294be4-3bcc-4436-90e5-70289e2bf523
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Nagami, T.
a4433d31-d788-4cf2-b0e3-e67db18ef597
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Matsuda, S.
1075e54e-ee28-49ed-82b0-e06664d2cb5b
Saito, S.
5a819d3c-9621-43ed-83a3-d326c2575e57
Arai, T.
7f53022e-dbb2-4eda-b354-71662925bb30
Shimada, T.
a6294be4-3bcc-4436-90e5-70289e2bf523
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde

Nagami, T., Tsuchiya, Yoshishige, Matsuda, S., Saito, S., Arai, T., Shimada, T., Mizuta, Hiroshi and Oda, S. (2008) Transient response analysis of programming/readout characteristics for NEMS memory. IEEE Silicon Nanoelectronics Workshop. M0430 .

Record type: Conference or Workshop Item (Other)
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Published date: June 2008
Additional Information: Event Dates: June 2008
Venue - Dates: IEEE Silicon Nanoelectronics Workshop, 2008-06-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266265
URI: https://eprints.soton.ac.uk/id/eprint/266265
PURE UUID: 36903fe0-adeb-42b8-8bac-2314c8a3b4f0

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Date deposited: 23 Jul 2008 09:02
Last modified: 19 Jul 2019 22:21

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