Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistor?
Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistor?
P1-22
Manoharan, M.
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Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
June 2008
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Manoharan, M., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi
(2008)
Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistor?
IEEE Silicon Nanoelectronics Workshop, Honolulu.
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Record type:
Conference or Workshop Item
(Poster)
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cpaper_150.pdf
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Published date: June 2008
Additional Information:
Event Dates: June 2008
Venue - Dates:
IEEE Silicon Nanoelectronics Workshop, Honolulu, 2008-06-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266266
URI: http://eprints.soton.ac.uk/id/eprint/266266
PURE UUID: b34b6d1e-7076-4945-b942-85b915e2c69d
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Date deposited: 23 Jul 2008 09:04
Last modified: 14 Mar 2024 08:24
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Contributors
Author:
M. Manoharan
Author:
Yoshishige Tsuchiya
Author:
S. Oda
Author:
Hiroshi Mizuta
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