Fabrication and characterization of nanoscale suspended floating gates for NEMS memory
Fabrication and characterization of nanoscale suspended floating gates for NEMS memory
pp 109-110
Momo, N.
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Nagami, T.
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Matsuda, S.
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Tsuchiya, Yoshishige
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Saito, S.
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Arai, T.
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Kimura, Y.
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Shimada, T.
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Mizuta, Hiroshi
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Oda, S.
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June 2006
Momo, N.
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Nagami, T.
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Matsuda, S.
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Tsuchiya, Yoshishige
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Saito, S.
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Arai, T.
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Kimura, Y.
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Shimada, T.
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Mizuta, Hiroshi
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Oda, S.
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Momo, N., Nagami, T., Matsuda, S., Tsuchiya, Yoshishige, Saito, S., Arai, T., Kimura, Y., Shimada, T., Mizuta, Hiroshi and Oda, S.
(2006)
Fabrication and characterization of nanoscale suspended floating gates for NEMS memory.
IEEE Silicon Nanoelectronics Workshop, Honolulu.
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Published date: June 2006
Additional Information:
Event Dates: June 2006
Venue - Dates:
IEEE Silicon Nanoelectronics Workshop, Honolulu, 2006-06-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266303
URI: http://eprints.soton.ac.uk/id/eprint/266303
PURE UUID: 4dcfccfe-058d-4013-bd67-63bc55ca9b7d
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Date deposited: 23 Jul 2008 10:47
Last modified: 14 Mar 2024 08:26
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Contributors
Author:
N. Momo
Author:
T. Nagami
Author:
S. Matsuda
Author:
Yoshishige Tsuchiya
Author:
S. Saito
Author:
T. Arai
Author:
Y. Kimura
Author:
T. Shimada
Author:
Hiroshi Mizuta
Author:
S. Oda
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