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Fabrication and characterization of nanoscale suspended floating gates for NEMS memory

Fabrication and characterization of nanoscale suspended floating gates for NEMS memory
Fabrication and characterization of nanoscale suspended floating gates for NEMS memory
pp 109-110
Momo, N.
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Nagami, T.
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Matsuda, S.
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Tsuchiya, Yoshishige
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Saito, S.
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Arai, T.
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Kimura, Y.
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Shimada, T.
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Mizuta, Hiroshi
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Oda, S.
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Momo, N.
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Nagami, T.
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Matsuda, S.
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Tsuchiya, Yoshishige
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Saito, S.
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Arai, T.
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Kimura, Y.
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Shimada, T.
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Mizuta, Hiroshi
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Oda, S.
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Momo, N., Nagami, T., Matsuda, S., Tsuchiya, Yoshishige, Saito, S., Arai, T., Kimura, Y., Shimada, T., Mizuta, Hiroshi and Oda, S. (2006) Fabrication and characterization of nanoscale suspended floating gates for NEMS memory. IEEE Silicon Nanoelectronics Workshop, Honolulu. pp 109-110 .

Record type: Conference or Workshop Item (Other)
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More information

Published date: June 2006
Additional Information: Event Dates: June 2006
Venue - Dates: IEEE Silicon Nanoelectronics Workshop, Honolulu, 2006-05-31
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266303
URI: http://eprints.soton.ac.uk/id/eprint/266303
PURE UUID: 4dcfccfe-058d-4013-bd67-63bc55ca9b7d

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Date deposited: 23 Jul 2008 10:47
Last modified: 20 Nov 2021 08:33

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Contributors

Author: N. Momo
Author: T. Nagami
Author: S. Matsuda
Author: Yoshishige Tsuchiya
Author: S. Saito
Author: T. Arai
Author: Y. Kimura
Author: T. Shimada
Author: Hiroshi Mizuta
Author: S. Oda

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