Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors
Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors
Nanocrystalline silicon thin films are promising materials for the development of advanced Large Scale Integration compatible quantum-dot and single-electron charging devices. The films consist of nanometer-scale grains of crystalline silicon, separated by amorphous silicon or silicon dioxide grain boundaries up to a few nanometer thick. These films have been used to fabricate single-electron transistor and memory devices, where the grains form single-electron charging islands isolated by tunnel barriers formed by the grain boundaries. The grain boundary tunnel barrier isolating the grains is also of great importance, as this determines the extent of the electrostatic and tunnel coupling between different grains. These effects can lead to the nanocrystalline silicon thin film behaving as a system of coupled quantum dots.
& more...
Khalafalla, M.
4a320e02-d7bf-4cc0-a5e4-bf818ea565bc
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Durrani, Z. A. K.
193df358-3ef5-4cd9-8f77-359c697e839d
January 2005
Khalafalla, M.
4a320e02-d7bf-4cc0-a5e4-bf818ea565bc
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Durrani, Z. A. K.
193df358-3ef5-4cd9-8f77-359c697e839d
Khalafalla, M., Mizuta, Hiroshi, Oda, S. and Durrani, Z. A. K.
(2005)
Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors.
International Conference on Nanoelectronics, Nanostructures and Carrier Interactions, Atsugi.
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Conference or Workshop Item
(Other)
Abstract
Nanocrystalline silicon thin films are promising materials for the development of advanced Large Scale Integration compatible quantum-dot and single-electron charging devices. The films consist of nanometer-scale grains of crystalline silicon, separated by amorphous silicon or silicon dioxide grain boundaries up to a few nanometer thick. These films have been used to fabricate single-electron transistor and memory devices, where the grains form single-electron charging islands isolated by tunnel barriers formed by the grain boundaries. The grain boundary tunnel barrier isolating the grains is also of great importance, as this determines the extent of the electrostatic and tunnel coupling between different grains. These effects can lead to the nanocrystalline silicon thin film behaving as a system of coupled quantum dots.
& more...
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Published date: January 2005
Additional Information:
Event Dates: January 2005
Venue - Dates:
International Conference on Nanoelectronics, Nanostructures and Carrier Interactions, Atsugi, 2005-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266320
URI: http://eprints.soton.ac.uk/id/eprint/266320
PURE UUID: 8ba6c858-d29b-4ab5-9a91-08244e8821eb
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Date deposited: 23 Jul 2008 11:30
Last modified: 14 Mar 2024 08:25
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Contributors
Author:
M. Khalafalla
Author:
Hiroshi Mizuta
Author:
S. Oda
Author:
Z. A. K. Durrani
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