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The Dependence of Deca-nanometre Poly-Si Thin Film Transistor Output Characteristics on the Grain Boundary Location

The Dependence of Deca-nanometre Poly-Si Thin Film Transistor Output Characteristics on the Grain Boundary Location
The Dependence of Deca-nanometre Poly-Si Thin Film Transistor Output Characteristics on the Grain Boundary Location
pp 29-30
Walker, P. M.
0b83c303-8870-41d4-9a2b-7757e0f66b9b
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Walker, P. M.
0b83c303-8870-41d4-9a2b-7757e0f66b9b
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Walker, P. M. and Mizuta, Hiroshi (2004) The Dependence of Deca-nanometre Poly-Si Thin Film Transistor Output Characteristics on the Grain Boundary Location. 2004 Silicon Nanoelectronics Workshop, Honolulu. pp 29-30 .

Record type: Conference or Workshop Item (Poster)
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More information

Published date: June 2004
Additional Information: Event Dates: June 2004
Venue - Dates: 2004 Silicon Nanoelectronics Workshop, Honolulu, 2004-06-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266348
URI: http://eprints.soton.ac.uk/id/eprint/266348
PURE UUID: 59ee105b-9d12-462a-8569-8209cbc2e560

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Date deposited: 25 Jul 2008 09:04
Last modified: 14 Mar 2024 08:27

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Contributors

Author: P. M. Walker
Author: Hiroshi Mizuta

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