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Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices

Record type: Conference or Workshop Item (Other)
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Citation

Kamiya, T., Furuta, Y., Tan, Y. -T., Durrani, Z. A. K., Mizuta, Hiroshi and Ahmed, H. (2002) Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices At The International Conference of Polycrystalline Semiconductors 2002. , p 11.

More information

Published date: September 2002
Additional Information: Event Dates: September 2002
Venue - Dates: The International Conference of Polycrystalline Semiconductors 2002, 2002-09-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266357
URI: http://eprints.soton.ac.uk/id/eprint/266357
PURE UUID: 4d50de77-a3e4-4a97-befe-57bedf1b5ac5

Catalogue record

Date deposited: 25 Jul 2008 09:26
Last modified: 18 Jul 2017 07:17

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Contributors

Author: T. Kamiya
Author: Y. Furuta
Author: Y. -T. Tan
Author: Z. A. K. Durrani
Author: Hiroshi Mizuta
Author: H. Ahmed

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