Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices


Kamiya, T., Furuta, Y., Tan, Y. -T., Durrani, Z. A. K., Mizuta, Hiroshi and Ahmed, H. (2002) Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices At The International Conference of Polycrystalline Semiconductors 2002. , p 11.

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Item Type: Conference or Workshop Item (Other)
Additional Information: Event Dates: September 2002
Venue - Dates: The International Conference of Polycrystalline Semiconductors 2002, 2002-09-01
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 266357
Date :
Date Event
September 2002Published
Date Deposited: 25 Jul 2008 09:26
Last Modified: 17 Apr 2017 19:04
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266357

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