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Tunnel barrier properties in polycrystalline-Si single-electron transistors”,

Furuta, Y., Mizuta, Hiroshi, Kamiya, T., Tan, Y. T., Nakazato, K., Durrani, Z. A. K. and Taniguchi, K. (2002) Tunnel barrier properties in polycrystalline-Si single-electron transistors”, At 32th European Solid-State Device Research Conference. , pp 399-402.

Record type: Conference or Workshop Item (Other)
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Published date: September 2002
Additional Information: Event Dates: September 2002
Venue - Dates: 32th European Solid-State Device Research Conference, 2002-09-01
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 266379
PURE UUID: 8a799daf-6f2c-494f-9323-97450a57bde8

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Date deposited: 28 Jul 2008 08:22
Last modified: 18 Jul 2017 07:16

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Author: Y. Furuta
Author: Hiroshi Mizuta
Author: T. Kamiya
Author: Y. T. Tan
Author: K. Nakazato
Author: Z. A. K. Durrani
Author: K. Taniguchi

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