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Electron transport via a few grain boundaries in heavily doped polycrystalline-silicon point contact devices

Electron transport via a few grain boundaries in heavily doped polycrystalline-silicon point contact devices
Electron transport via a few grain boundaries in heavily doped polycrystalline-silicon point contact devices
44
Furuta, Y.
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Mizuta, Hiroshi
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Nakazato, K.
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Tan, Y. T.
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Kamiya, T.
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Durrani, Z. A. K.
193df358-3ef5-4cd9-8f77-359c697e839d
Taniguchi, K.
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Furuta, Y.
2b3632d6-4ef3-4bce-a686-0e0973b35dcd
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Tan, Y. T.
2a1d615d-e201-4488-8eaf-c8bef61d68aa
Kamiya, T.
d52831ff-3dba-4d58-abd2-55958ebade6e
Durrani, Z. A. K.
193df358-3ef5-4cd9-8f77-359c697e839d
Taniguchi, K.
9e6a93cb-1569-4d99-8507-9b227531c39b

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K. and Taniguchi, K. (2001) Electron transport via a few grain boundaries in heavily doped polycrystalline-silicon point contact devices. 2001 Silicon Nanoelectronics Workshop, Kyoto. p. 44 .

Record type: Conference or Workshop Item (Poster)
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More information

Published date: June 2001
Additional Information: Event Dates: June 2001
Venue - Dates: 2001 Silicon Nanoelectronics Workshop, Kyoto, 2001-06-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266382
URI: http://eprints.soton.ac.uk/id/eprint/266382
PURE UUID: 2130b4bd-b531-418e-a07e-ded80ff85684

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Date deposited: 28 Jul 2008 08:33
Last modified: 14 Mar 2024 08:26

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Contributors

Author: Y. Furuta
Author: Hiroshi Mizuta
Author: K. Nakazato
Author: Y. T. Tan
Author: T. Kamiya
Author: Z. A. K. Durrani
Author: K. Taniguchi

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