Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K. and Taniguchi, K. (2001) Electron transport via a few grain boundaries in heavily doped polycrystalline-silicon point contact devices. 2001 Silicon Nanoelectronics Workshop, Kyoto. p. 44 .
Record type:
Conference or Workshop Item
(Poster)
More information
Published date: June 2001
Additional Information:
Event Dates: June 2001
Venue - Dates:
2001 Silicon Nanoelectronics Workshop, Kyoto, 2001-06-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266382
URI: http://eprints.soton.ac.uk/id/eprint/266382
PURE UUID: 2130b4bd-b531-418e-a07e-ded80ff85684
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Date deposited: 28 Jul 2008 08:33
Last modified: 14 Mar 2024 08:26
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Contributors
Author:
Y. Furuta
Author:
Hiroshi Mizuta
Author:
K. Nakazato
Author:
Y. T. Tan
Author:
T. Kamiya
Author:
Z. A. K. Durrani
Author:
K. Taniguchi
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