Silicon radio frequency single-electron transistors operating at above 4.2 K
Silicon radio frequency single-electron transistors operating at above 4.2 K
Manoharan, M
aac463c9-3218-4fac-9a70-57c5b05ece93
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
September 2008
Manoharan, M
aac463c9-3218-4fac-9a70-57c5b05ece93
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Manoharan, M, Tsuchiya, Yoshishige, Oda, S and Mizuta, Hiroshi
(2008)
Silicon radio frequency single-electron transistors operating at above 4.2 K.
40th International Conference on Solid State Devices and Materials (SSDM2008).
Record type:
Conference or Workshop Item
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Text
cpaper_164.pdf
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Published date: September 2008
Venue - Dates:
40th International Conference on Solid State Devices and Materials (SSDM2008), 2008-09-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266746
URI: http://eprints.soton.ac.uk/id/eprint/266746
PURE UUID: b0a6961a-170d-4acb-be71-41cbe8a25e2d
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Date deposited: 02 Oct 2008 18:28
Last modified: 14 Mar 2024 08:34
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Contributors
Author:
M Manoharan
Author:
Yoshishige Tsuchiya
Author:
S Oda
Author:
Hiroshi Mizuta
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