Co-integration of Silicon Nanodevices and NEMS for Advanced Information Processing (Invited Talk)
Co-integration of Silicon Nanodevices and NEMS for Advanced Information Processing (Invited Talk)
In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM)structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.
Mizuta, Hiroshi
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Nagami, T
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Ogi, Jun
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Pruvost, B
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Ramirez, M.A.G
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Yoshimura, Hideo
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Tsuchiya, Yoshishige
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Oda, S
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October 2008
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nagami, T
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Ogi, Jun
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Pruvost, B
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Ramirez, M.A.G
eed7c1b3-7a08-4ccc-a176-ae816be19999
Yoshimura, Hideo
5db72fe7-21e1-49b5-96ba-6865aec30844
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Mizuta, Hiroshi, Nagami, T, Ogi, Jun, Pruvost, B, Ramirez, M.A.G, Yoshimura, Hideo, Tsuchiya, Yoshishige and Oda, S
(2008)
Co-integration of Silicon Nanodevices and NEMS for Advanced Information Processing (Invited Talk).
9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), Beijing.
Record type:
Conference or Workshop Item
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Abstract
In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM)structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.
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Co-integration_of_Silicon_Nanodevices_and_NEMS_for_Advanced_Information_Processing.pdf
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Published date: October 2008
Venue - Dates:
9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), Beijing, 2008-10-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266838
URI: http://eprints.soton.ac.uk/id/eprint/266838
PURE UUID: 2a58370c-46b4-47a5-abc7-13c215d85b44
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Date deposited: 27 Oct 2008 17:44
Last modified: 14 Mar 2024 08:36
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Contributors
Author:
Hiroshi Mizuta
Author:
T Nagami
Author:
Jun Ogi
Author:
B Pruvost
Author:
M.A.G Ramirez
Author:
Hideo Yoshimura
Author:
Yoshishige Tsuchiya
Author:
S Oda
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