The University of Southampton
University of Southampton Institutional Repository

Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K

Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K
Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K
A radio frequency single-electron transistor (RF-SET) based on a silicon-on-insulator (SOI) substrate is demonstrated to operate successfully at temperatures above 4.2 K. The SOI SET was fabricated by inducing lateral constrictions in doped SOI nanowires. The device structure was optimized to overcome the inherent drawback of high resistance with the SOI SETs. We performed temperature variation measurements after five thermal cyclings of the same sample to 4.2 K and found that the single-dot device transport characteristics are highly stable. The charge sensitivity was measured to be 36 ?erms Hz?1/2 at 4.2 K, and the RF-SET operation was demonstrated up to 12.5 K for the first time. This work is an important prerequisite to realizing operation of RF-SETs at noncryogenic temperatures
1530-6984
4648-4652
Manoharan, M
aac463c9-3218-4fac-9a70-57c5b05ece93
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Manoharan, M
aac463c9-3218-4fac-9a70-57c5b05ece93
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Manoharan, M, Tsuchiya, Yoshishige, Oda, S and Mizuta, Hiroshi (2008) Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K. Nano Letters, 8 (12), 4648-4652. (doi:10.1021/nl801992j).

Record type: Article

Abstract

A radio frequency single-electron transistor (RF-SET) based on a silicon-on-insulator (SOI) substrate is demonstrated to operate successfully at temperatures above 4.2 K. The SOI SET was fabricated by inducing lateral constrictions in doped SOI nanowires. The device structure was optimized to overcome the inherent drawback of high resistance with the SOI SETs. We performed temperature variation measurements after five thermal cyclings of the same sample to 4.2 K and found that the single-dot device transport characteristics are highly stable. The charge sensitivity was measured to be 36 ?erms Hz?1/2 at 4.2 K, and the RF-SET operation was demonstrated up to 12.5 K for the first time. This work is an important prerequisite to realizing operation of RF-SETs at noncryogenic temperatures

Text
nl801992j.pdf - Other
Download (858kB)

More information

Published date: 2008
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266988
URI: https://eprints.soton.ac.uk/id/eprint/266988
ISSN: 1530-6984
PURE UUID: 7943d40a-3872-4222-ad97-91a9f5d267f2

Catalogue record

Date deposited: 17 Dec 2008 16:03
Last modified: 19 Jul 2019 22:19

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×