Vertical MOSFETs for high performance, low cost CMOS
Vertical MOSFETs for high performance, low cost CMOS
Abstract-We present a review of recent reports on vertical MOSFETs which includes a summary of our own research in this area. Such devices can offer a decananometer channel length in a relaxed lithography. Furthermore, the footprint is substantially smaller than an equivalent lateral MOSFETfor a given on-current. We summarise a number of innovative device architectures that allow control ofshort channel effects and reduction of parasitic elements. Both numerical modelling and experimental results are presented to validate the proposals. The devices are particularly suited to radio frequency application.
Hall, S.
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Tan, L.
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Buiu, O.
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Hakim, M. M. A.
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Uchino, T.
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Ashburn, P.
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White, W. Redman-
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17 September 2007
Hall, S.
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Tan, L.
93a93652-be22-48a3-b4d0-b4e6605088d5
Buiu, O.
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Hakim, M. M. A.
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Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Ashburn, P.
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White, W. Redman-
41711f6b-579a-49fb-95e6-c85ec42708c9
Hall, S., Tan, L., Buiu, O., Hakim, M. M. A., Uchino, T., Ashburn, P. and White, W. Redman-
(2007)
Vertical MOSFETs for high performance, low cost CMOS.
International Semiconductor Conference, CAS.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Abstract-We present a review of recent reports on vertical MOSFETs which includes a summary of our own research in this area. Such devices can offer a decananometer channel length in a relaxed lithography. Furthermore, the footprint is substantially smaller than an equivalent lateral MOSFETfor a given on-current. We summarise a number of innovative device architectures that allow control ofshort channel effects and reduction of parasitic elements. Both numerical modelling and experimental results are presented to validate the proposals. The devices are particularly suited to radio frequency application.
More information
Published date: 17 September 2007
Additional Information:
Event Dates: 17, September
Venue - Dates:
International Semiconductor Conference, CAS, 2007-09-17
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267244
URI: http://eprints.soton.ac.uk/id/eprint/267244
PURE UUID: eacfa5e6-84c0-4622-9906-5484dff17c50
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Date deposited: 01 Apr 2009 16:04
Last modified: 14 Mar 2024 08:46
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Contributors
Author:
S. Hall
Author:
L. Tan
Author:
O. Buiu
Author:
M. M. A. Hakim
Author:
T. Uchino
Author:
W. Redman- White
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