Hall, S., Tan, L., Buiu, O., Hakim, M. M. A., Uchino, T., Ashburn, P. and White, W. Redman-
VERTICAL MOSFETs FOR HIGH PERFORMANCE, LOW COST CMOS
At International Semiconductor Conference, CAS.
Abstract-We present a review of recent reports on vertical MOSFETs which includes a summary of our own research in this area. Such devices can offer a decananometer channel length in a relaxed lithography. Furthermore, the footprint is substantially smaller than an equivalent lateral MOSFETfor a given on-current. We summarise a number of innovative device architectures that allow control ofshort channel effects and reduction of parasitic elements. Both numerical modelling and experimental results are presented to validate the proposals. The devices are particularly suited to radio frequency application.
Conference or Workshop Item
||Event Dates: 17, September
|Venue - Dates:
||International Semiconductor Conference, CAS, 2007-09-17
||Nanoelectronics and Nanotechnology
|17 September 2007||Published|
||01 Apr 2009 16:04
||17 Apr 2017 18:51
|Further Information:||Google Scholar|
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