VERTICAL MOSFETs FOR HIGH PERFORMANCE, LOW COST CMOS


Hall, S., Tan, L., Buiu, O., Hakim, M. M. A., Uchino, T., Ashburn, P. and White, W. Redman- (2007) VERTICAL MOSFETs FOR HIGH PERFORMANCE, LOW COST CMOS At International Semiconductor Conference, CAS.

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Description/Abstract

Abstract-We present a review of recent reports on vertical MOSFETs which includes a summary of our own research in this area. Such devices can offer a decananometer channel length in a relaxed lithography. Furthermore, the footprint is substantially smaller than an equivalent lateral MOSFETfor a given on-current. We summarise a number of innovative device architectures that allow control ofshort channel effects and reduction of parasitic elements. Both numerical modelling and experimental results are presented to validate the proposals. The devices are particularly suited to radio frequency application.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Event Dates: 17, September
Venue - Dates: International Semiconductor Conference, CAS, 2007-09-17
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 267244
Date :
Date Event
17 September 2007Published
Date Deposited: 01 Apr 2009 16:04
Last Modified: 17 Apr 2017 18:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/267244

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