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Vertical MOSFETs for high performance, low cost CMOS

Hall, S., Tan, L., Buiu, O., Hakim, M. M. A., Uchino, T., Ashburn, P. and White, W. Redman- (2007) Vertical MOSFETs for high performance, low cost CMOS At International Semiconductor Conference, CAS.

Record type: Conference or Workshop Item (Paper)

Abstract

Abstract-We present a review of recent reports on vertical MOSFETs which includes a summary of our own research in this area. Such devices can offer a decananometer channel length in a relaxed lithography. Furthermore, the footprint is substantially smaller than an equivalent lateral MOSFETfor a given on-current. We summarise a number of innovative device architectures that allow control ofshort channel effects and reduction of parasitic elements. Both numerical modelling and experimental results are presented to validate the proposals. The devices are particularly suited to radio frequency application.

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More information

Published date: 17 September 2007
Additional Information: Event Dates: 17, September
Venue - Dates: International Semiconductor Conference, CAS, 2007-09-17
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267244
URI: http://eprints.soton.ac.uk/id/eprint/267244
PURE UUID: eacfa5e6-84c0-4622-9906-5484dff17c50

Catalogue record

Date deposited: 01 Apr 2009 16:04
Last modified: 18 Jul 2017 07:06

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Contributors

Author: S. Hall
Author: L. Tan
Author: O. Buiu
Author: M. M. A. Hakim
Author: T. Uchino
Author: P. Ashburn
Author: W. Redman- White

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