Kurihara, T, Nagahama, Y, Kobayashi, D, Niikura, H, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H, Uchida, K and Oda, S (2009) Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide. IEEE Silicon Nanoelectronics Workshop 2009, Kyoto. 13 - 14 Jun 2009.
Record type:
Conference or Workshop Item
(Poster)
More information
Published date: 13 June 2009
Additional Information:
Event Dates: 13-14 June 2009
Venue - Dates:
IEEE Silicon Nanoelectronics Workshop 2009, Kyoto, 2009-06-13 - 2009-06-14
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267371
URI: http://eprints.soton.ac.uk/id/eprint/267371
PURE UUID: 647f7afc-553b-416c-8b20-410e693c4d27
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Date deposited: 14 May 2009 16:17
Last modified: 14 Mar 2024 08:49
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Contributors
Author:
T Kurihara
Author:
Y Nagahama
Author:
D Kobayashi
Author:
H Niikura
Author:
Yoshishige Tsuchiya
Author:
Hiroshi Mizuta
Author:
H Nohira
Author:
K Uchida
Author:
S Oda
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