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Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide

Kurihara, T, Nagahama, Y, Kobayashi, D, Niikura, H, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H, Uchida, K and Oda, S (2009) Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide At IEEE Silicon Nanoelectronics Workshop 2009. 13 - 14 Jun 2009.

Record type: Conference or Workshop Item (Poster)
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More information

Published date: 13 June 2009
Additional Information: Event Dates: 13-14 June 2009
Venue - Dates: IEEE Silicon Nanoelectronics Workshop 2009, 2009-06-13 - 2009-06-14
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267371
URI: http://eprints.soton.ac.uk/id/eprint/267371
PURE UUID: 647f7afc-553b-416c-8b20-410e693c4d27

Catalogue record

Date deposited: 14 May 2009 16:17
Last modified: 18 Jul 2017 07:05

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Contributors

Author: T Kurihara
Author: Y Nagahama
Author: D Kobayashi
Author: H Niikura
Author: Yoshishige Tsuchiya
Author: Hiroshi Mizuta
Author: H Nohira
Author: K Uchida
Author: S Oda

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