Position-controllable Ge nanowires growth on patterned Au catalyst substrate

Abstract

A well position-controllable single Ge nanowire array was grown on patterned Au catalysts substrate by low-pressure chemical vapor deposition. Both transmission electron microscope and X-ray diffraction results indicate that Ge nanowires are single crystalline with diamond structure. By optimizing the electron-beam lithography process, Au patterns with a diameter of 10 nm were prepared by lift-off method. The growth of Ge nanowires can be precisely controlled by adjusting the location of catalysts, which may offer the possibility of in situ fabrication of nanowire devices

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