Tsuchiya, Yoshishige, Furukawa, R, Kitamura, K, Nohira, H and Oda, S (2008) Pr-Si-O Gate Stack with an Ultrathin Interfacial Layer Grown by MOCVD and PDA under Low O2 Partial Pressure. International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2008), Tokyo, Japan. 05 - 07 Nov 2008.
Record type:
Conference or Workshop Item
(Other)
More information
Published date: 2008
Additional Information:
Event Dates: 5-7 November
Venue - Dates:
International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2008), Tokyo, Japan, 2008-11-05 - 2008-11-07
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267448
URI: http://eprints.soton.ac.uk/id/eprint/267448
PURE UUID: bfcc89ce-b953-4e69-8bee-f7251ef0be40
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Date deposited: 01 Jun 2009 15:32
Last modified: 14 Mar 2024 08:50
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Contributors
Author:
Yoshishige Tsuchiya
Author:
R Furukawa
Author:
K Kitamura
Author:
H Nohira
Author:
S Oda
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