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Pr-Si-O Gate Stack with an Ultrathin Interfacial Layer Grown by MOCVD and PDA under Low O2 Partial Pressure

Pr-Si-O Gate Stack with an Ultrathin Interfacial Layer Grown by MOCVD and PDA under Low O2 Partial Pressure
Pr-Si-O Gate Stack with an Ultrathin Interfacial Layer Grown by MOCVD and PDA under Low O2 Partial Pressure
Tsuchiya, Yoshishige
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Furukawa, R
825f0d13-023a-4356-ac45-63945754addd
Kitamura, K
18a78b42-5c05-477e-ac54-b7423e59beb5
Nohira, H
6153ef31-aace-452f-a86e-68f637905e78
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Furukawa, R
825f0d13-023a-4356-ac45-63945754addd
Kitamura, K
18a78b42-5c05-477e-ac54-b7423e59beb5
Nohira, H
6153ef31-aace-452f-a86e-68f637905e78
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Tsuchiya, Yoshishige, Furukawa, R, Kitamura, K, Nohira, H and Oda, S (2008) Pr-Si-O Gate Stack with an Ultrathin Interfacial Layer Grown by MOCVD and PDA under Low O2 Partial Pressure. International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2008), Japan. 05 - 07 Nov 2008.

Record type: Conference or Workshop Item (Other)
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More information

Published date: 2008
Additional Information: Event Dates: 5-7 November
Venue - Dates: International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2008), Japan, 2008-11-05 - 2008-11-07
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267448
URI: https://eprints.soton.ac.uk/id/eprint/267448
PURE UUID: bfcc89ce-b953-4e69-8bee-f7251ef0be40

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Date deposited: 01 Jun 2009 15:32
Last modified: 18 Jul 2017 07:04

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Contributors

Author: Yoshishige Tsuchiya
Author: R Furukawa
Author: K Kitamura
Author: H Nohira
Author: S Oda

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