The University of Southampton
University of Southampton Institutional Repository

A self-aligned silicidation technology for surround-gate vertical MOSFETS

Record type: Conference or Workshop Item (Other)

We report for the first time a silicidation technology for surround gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for the silicidation. Silicided 120 nm n-channel devices show a 30% improvement in drive current in comparison to non silicided devices, but this is accompanied by a small degradation in sub-threshold slope and DIBL. This problem is solved using a frame gate architecture in which the pillar sidewalls are protected from the silicidation process. Silicided frame gate transistors show a similar increase in drive current without any significant degradation of sub-threshold slope or DIBL. For a 120 nm channel length, silicided frame gate vertical nMOSFETs show a 30% improvement in the drive current with an excellent sub-threshold slope of 78mV/decade and a DIBL of 30 mV/V. For an 80 nm channel length, a 43% improvement in the drive current is obtained.

Full text not available from this repository.

Citation

Hakim, M.M.A., Mallik, K., de Groot, C.H., Redman-White, W, Tan, L., Hall, S. and Ashburn, P. (2009) A self-aligned silicidation technology for surround-gate vertical MOSFETS At 39th European Solid-State Device Research Conference (ESSDERC 2009), Greece. 14 - 18 Sep 2009.

More information

Published date: 17 September 2009
Venue - Dates: 39th European Solid-State Device Research Conference (ESSDERC 2009), Greece, 2009-09-14 - 2009-09-18
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267566
URI: http://eprints.soton.ac.uk/id/eprint/267566
PURE UUID: 841bf5b5-36e0-461c-8bf4-5a634eabc28e
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 15 Jun 2009 12:40
Last modified: 24 Jul 2017 16:40

Export record

Contributors

Author: M.M.A. Hakim
Author: K. Mallik
Author: C.H. de Groot ORCID iD
Author: W Redman-White
Author: L. Tan
Author: S. Hall
Author: P. Ashburn

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×