DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications
DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications
Hwang, C. J.
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Chong, Harold
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Holland, M.
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Thayne, I. G.
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Elgaid, K
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4 June 2009
Hwang, C. J.
efda5667-fd9c-4805-a42e-9a7a7446f458
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Holland, M.
d489b2b9-156e-460d-b1c0-3f3eef8b4c67
Thayne, I. G.
30ca8e22-9b47-421e-be3c-d14c1b4b2bf9
Elgaid, K
11823bd0-5da1-44e4-8bfb-c232f5df31eb
Hwang, C. J., Chong, Harold, Holland, M., Thayne, I. G. and Elgaid, K
(2009)
DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications.
Electronics Letters.
Text
switch_paper_090616.pdf
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Published date: 4 June 2009
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267613
URI: http://eprints.soton.ac.uk/id/eprint/267613
ISSN: 0013-5194
PURE UUID: 5868bae0-fe2b-4a7a-b97f-a7ae48851297
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Date deposited: 23 Jun 2009 07:35
Last modified: 15 Mar 2024 03:30
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Contributors
Author:
C. J. Hwang
Author:
Harold Chong
Author:
M. Holland
Author:
I. G. Thayne
Author:
K Elgaid
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