Double-polysilicon self-aligned lateral bipolar transistors

Abstract

A new lateral bipolar junction transistor that utilises a double-polysilicon self-aligned structure to maximise high-frequency performance is introduced. Silicon-on-oxide (SOI) wafers are used to isolate devices from the substrate and to minimise parasitic substrate capacitances(CJCS0) around 1.3–2.6 fF (substrate is ground). A SOI thickness of 0.2–0.5 μm combined with 0.13–0.25 μm lithography could allow a reduction of transistor dimensions down to (0.2–0.5) · (0.13–0.25) lm2 and give an estimated minimum emitter/base junction capacitance(CJE0) of 0.54–1.36 fF. Simple device isolation is predicted to produce a small collector/base junction capacitance (CJC0) of 0.42–2.00 fF. Furthermore, use of a double base contact can help reduce base resistance (RB) to 0.43–1.17 kW and a wide collector window directly contacted to the collector is estimated to result in around 0.66–1.58 kW collector resistance (RC). By taking all parameters into account a cut-off frequency (fT) of 69–116 GHz and maximum oscillation frequency (fmax) of 61–128 GHz is predicted for this design, in addition a gain of 47–101(using minimum gain enhancement) and roughly 10.6–21.0 ps ECL propagation delay time, at a current of 0.4–1.0 mA could be achieved. Our simulations indicate that this new doubled-polysilicon self-aligned structure could outperform all other silicon bipolar transistors that have been reported.

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