Effects of CNT Diameter Variability on a CNFET-Based SRAM
Effects of CNT Diameter Variability on a CNFET-Based SRAM
In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on performance and stability of 6-T SRAM cells. Parametric and Monte Carlo simulations are performed for SRAM designs based on different SWCNT mean diameters. Parameters such as read/write delays, Static Noise Margin (SNM) and Write Margin (WM) are studied together with the effects of diameter variations on them. Our results show that minimum variation of timing characteristics and noise margins can be achieved at a CNT mean diameter of 1.2nm.
CNFET, SRAM, Variability, Carbon Nanotube, Noise Margin
Shahidipour, Hamed
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Zhong, Yue
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Ahmadi, Arash
c88cc469-b208-4dad-9541-af5e555e0748
Maharatna, Koushik
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Shahidipour, Hamed
74b0912b-8e97-437d-8eed-061bc98fdafa
Zhong, Yue
47731e93-67a9-4a34-a3cf-8ac40e1e0eaa
Ahmadi, Arash
c88cc469-b208-4dad-9541-af5e555e0748
Maharatna, Koushik
93bef0a2-e011-4622-8c56-5447da4cd5dd
Shahidipour, Hamed, Zhong, Yue, Ahmadi, Arash and Maharatna, Koushik
(2010)
Effects of CNT Diameter Variability on a CNFET-Based SRAM.
Asia Pacific Conference on Circuits and Systems (APCCAS), Asia.
(Submitted)
Record type:
Conference or Workshop Item
(Other)
Abstract
In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on performance and stability of 6-T SRAM cells. Parametric and Monte Carlo simulations are performed for SRAM designs based on different SWCNT mean diameters. Parameters such as read/write delays, Static Noise Margin (SNM) and Write Margin (WM) are studied together with the effects of diameter variations on them. Our results show that minimum variation of timing characteristics and noise margins can be achieved at a CNT mean diameter of 1.2nm.
Text
1569321293.pdf
- Accepted Manuscript
More information
Submitted date: December 2010
Additional Information:
Event Dates: 2010
Venue - Dates:
Asia Pacific Conference on Circuits and Systems (APCCAS), Asia, 2010-01-01
Keywords:
CNFET, SRAM, Variability, Carbon Nanotube, Noise Margin
Organisations:
Electronic & Software Systems
Identifiers
Local EPrints ID: 271604
URI: http://eprints.soton.ac.uk/id/eprint/271604
PURE UUID: 60889652-5d75-4dc4-b36f-93df7c90fee4
Catalogue record
Date deposited: 28 Sep 2010 15:14
Last modified: 14 Mar 2024 09:35
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Contributors
Author:
Hamed Shahidipour
Author:
Yue Zhong
Author:
Arash Ahmadi
Author:
Koushik Maharatna
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