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Effects of CNT Diameter Variability on a CNFET-Based SRAM

Record type: Conference or Workshop Item (Other)

In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on performance and stability of 6-T SRAM cells. Parametric and Monte Carlo simulations are performed for SRAM designs based on different SWCNT mean diameters. Parameters such as read/write delays, Static Noise Margin (SNM) and Write Margin (WM) are studied together with the effects of diameter variations on them. Our results show that minimum variation of timing characteristics and noise margins can be achieved at a CNT mean diameter of 1.2nm.

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Citation

Shahidipour, Hamed, Zhong, Yue, Ahmadi, Arash and Maharatna, Koushik (2010) Effects of CNT Diameter Variability on a CNFET-Based SRAM At Asia Pacific Conference on Circuits and Systems (APCCAS).

More information

Submitted date: December 2010
Additional Information: Event Dates: 2010
Venue - Dates: Asia Pacific Conference on Circuits and Systems (APCCAS), 2010-01-01
Keywords: CNFET, SRAM, Variability, Carbon Nanotube, Noise Margin
Organisations: Electronic & Software Systems

Identifiers

Local EPrints ID: 271604
URI: http://eprints.soton.ac.uk/id/eprint/271604
PURE UUID: 60889652-5d75-4dc4-b36f-93df7c90fee4

Catalogue record

Date deposited: 28 Sep 2010 15:14
Last modified: 18 Jul 2017 06:41

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Contributors

Author: Hamed Shahidipour
Author: Yue Zhong
Author: Arash Ahmadi

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