Effects of CNT Diameter Variability on a CNFET-Based SRAM


Shahidipour, Hamed, Zhong, Yue, Ahmadi, Arash and Maharatna, Koushik (2010) Effects of CNT Diameter Variability on a CNFET-Based SRAM At Asia Pacific Conference on Circuits and Systems (APCCAS).

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Description/Abstract

In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on performance and stability of 6-T SRAM cells. Parametric and Monte Carlo simulations are performed for SRAM designs based on different SWCNT mean diameters. Parameters such as read/write delays, Static Noise Margin (SNM) and Write Margin (WM) are studied together with the effects of diameter variations on them. Our results show that minimum variation of timing characteristics and noise margins can be achieved at a CNT mean diameter of 1.2nm.

Item Type: Conference or Workshop Item (Other)
Additional Information: Event Dates: 2010
Venue - Dates: Asia Pacific Conference on Circuits and Systems (APCCAS), 2010-01-01
Keywords: CNFET, SRAM, Variability, Carbon Nanotube, Noise Margin
Organisations: Electronic & Software Systems
ePrint ID: 271604
Date :
Date Event
December 2010Submitted
Date Deposited: 28 Sep 2010 15:14
Last Modified: 17 Apr 2017 18:10
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/271604

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