Shahidipour, Hamed, Zhong, Yue, Ahmadi, Arash and Maharatna, Koushik
Effects of CNT Diameter Variability on a CNFET-Based SRAM
At Asia Pacific Conference on Circuits and Systems (APCCAS).
In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on performance and stability of 6-T SRAM cells. Parametric and Monte Carlo simulations are performed for SRAM designs based on different SWCNT mean diameters. Parameters such as read/write delays, Static Noise Margin (SNM) and Write Margin (WM) are studied together with the effects of diameter variations on them. Our results show that minimum variation of timing characteristics and noise margins can be achieved at a CNT mean diameter of 1.2nm.
Conference or Workshop Item
||Event Dates: 2010
|Venue - Dates:
||Asia Pacific Conference on Circuits and Systems (APCCAS), 2010-01-01
||CNFET, SRAM, Variability, Carbon Nanotube, Noise Margin
||Electronic & Software Systems
||28 Sep 2010 15:14
||17 Apr 2017 18:10
|Further Information:||Google Scholar|
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