Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors
Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors
The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/dec.
annealing, carbon nanotubes, chemical vapour deposition, elemental semiconductors, field effect transistors, germanium, nanofabrication, nanoparticles, Raman spectra, semiconductor growth, semiconductor nanotubes
K21-K23
Uchino, T.
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Ayre, G.
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Smith, D.C.
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Hutchison, J.L.
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de Groot, C.H. (Kees)
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
8 February 2011
Uchino, T.
53356d82-f008-4b0e-8c7e-359c0d283b6c
Ayre, G.
f0c2f684-1bba-4bf9-8e23-a82e51787ff9
Smith, D.C.
8c690bc4-be37-4141-972f-f0787a691648
Hutchison, J.L.
8d586f88-f515-450c-b504-55ea039cae68
de Groot, C.H. (Kees)
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Uchino, T., Ayre, G., Smith, D.C., Hutchison, J.L., de Groot, C.H. (Kees) and Ashburn, P.
(2011)
Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors.
Electrochemical and Solid-State Letters, 14 (4), .
(doi:10.1149/1.3534829).
Abstract
The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/dec.
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Published date: 8 February 2011
Keywords:
annealing, carbon nanotubes, chemical vapour deposition, elemental semiconductors, field effect transistors, germanium, nanofabrication, nanoparticles, Raman spectra, semiconductor growth, semiconductor nanotubes
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 272001
URI: http://eprints.soton.ac.uk/id/eprint/272001
PURE UUID: 8f5ce968-6631-4ba2-afbd-880b1874846b
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Date deposited: 10 Feb 2011 09:24
Last modified: 15 Mar 2024 03:11
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Contributors
Author:
T. Uchino
Author:
G. Ayre
Author:
D.C. Smith
Author:
J.L. Hutchison
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