Improved drive current in RF vertical MOSFETS using hydrogen anneal
Improved drive current in RF vertical MOSFETS using hydrogen anneal
This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors without the hydrogen anneal. The value of drive current achieved is 250 ?A/?m, which is a record for thick pillar vertical MOSFETs. This improved performance is obtained even though a sacrificial oxidation was performed prior to the hydrogen anneal to smooth the pillar sidewall. The values of subthreshold slope and DIBL are 79 mV/decade and 45 mV/V, respectively, which are significantly better than most values reported in the literature for comparable devices. The H2 anneal is also shown to decrease the OFF-state leakage current by a factor of three.
Fillet local oxidation (FILOX), hydrogen anneal, vertical MOSFET.
279-281
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Abuelgasim, A.
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Tan, L.
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de Groot, C.H.
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Redman-White, W.
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Hall, S.
92b937f4-d354-4aab-871b-b0e8b6018a1d
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
4 March 2011
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Abuelgasim, A.
eaa5e29e-510d-45e4-a724-d7f69c05f853
Tan, L.
93a93652-be22-48a3-b4d0-b4e6605088d5
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Hall, S.
92b937f4-d354-4aab-871b-b0e8b6018a1d
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hakim, M.M.A., Abuelgasim, A., Tan, L., de Groot, C.H., Redman-White, W., Hall, S. and Ashburn, P.
(2011)
Improved drive current in RF vertical MOSFETS using hydrogen anneal.
IEEE Electron Device Letters, 32 (3), .
(doi:10.1109/LED.2010.2101042).
Abstract
This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors without the hydrogen anneal. The value of drive current achieved is 250 ?A/?m, which is a record for thick pillar vertical MOSFETs. This improved performance is obtained even though a sacrificial oxidation was performed prior to the hydrogen anneal to smooth the pillar sidewall. The values of subthreshold slope and DIBL are 79 mV/decade and 45 mV/V, respectively, which are significantly better than most values reported in the literature for comparable devices. The H2 anneal is also shown to decrease the OFF-state leakage current by a factor of three.
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Published date: 4 March 2011
Keywords:
Fillet local oxidation (FILOX), hydrogen anneal, vertical MOSFET.
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 272059
URI: http://eprints.soton.ac.uk/id/eprint/272059
ISSN: 0741-3106
PURE UUID: e28cf8fe-af50-4328-a601-99be0c9f2c33
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Date deposited: 23 Feb 2011 17:28
Last modified: 15 Mar 2024 03:11
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Author:
M.M.A. Hakim
Author:
A. Abuelgasim
Author:
L. Tan
Author:
W. Redman-White
Author:
S. Hall
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