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Improved drive current in RF vertical MOSFETS using hydrogen anneal

Improved drive current in RF vertical MOSFETS using hydrogen anneal
Improved drive current in RF vertical MOSFETS using hydrogen anneal
This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors without the hydrogen anneal. The value of drive current achieved is 250 ?A/?m, which is a record for thick pillar vertical MOSFETs. This improved performance is obtained even though a sacrificial oxidation was performed prior to the hydrogen anneal to smooth the pillar sidewall. The values of subthreshold slope and DIBL are 79 mV/decade and 45 mV/V, respectively, which are significantly better than most values reported in the literature for comparable devices. The H2 anneal is also shown to decrease the OFF-state leakage current by a factor of three.
Fillet local oxidation (FILOX), hydrogen anneal, vertical MOSFET.
0741-3106
279-281
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Abuelgasim, A.
eaa5e29e-510d-45e4-a724-d7f69c05f853
Tan, L.
93a93652-be22-48a3-b4d0-b4e6605088d5
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Hall, S.
92b937f4-d354-4aab-871b-b0e8b6018a1d
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Abuelgasim, A.
eaa5e29e-510d-45e4-a724-d7f69c05f853
Tan, L.
93a93652-be22-48a3-b4d0-b4e6605088d5
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Hall, S.
92b937f4-d354-4aab-871b-b0e8b6018a1d
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Hakim, M.M.A., Abuelgasim, A., Tan, L., de Groot, C.H., Redman-White, W., Hall, S. and Ashburn, P. (2011) Improved drive current in RF vertical MOSFETS using hydrogen anneal. IEEE Electron Device Letters, 32 (3), 279-281. (doi:10.1109/LED.2010.2101042).

Record type: Article

Abstract

This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors without the hydrogen anneal. The value of drive current achieved is 250 ?A/?m, which is a record for thick pillar vertical MOSFETs. This improved performance is obtained even though a sacrificial oxidation was performed prior to the hydrogen anneal to smooth the pillar sidewall. The values of subthreshold slope and DIBL are 79 mV/decade and 45 mV/V, respectively, which are significantly better than most values reported in the literature for comparable devices. The H2 anneal is also shown to decrease the OFF-state leakage current by a factor of three.

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Published date: 4 March 2011
Keywords: Fillet local oxidation (FILOX), hydrogen anneal, vertical MOSFET.
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272059
URI: https://eprints.soton.ac.uk/id/eprint/272059
ISSN: 0741-3106
PURE UUID: e28cf8fe-af50-4328-a601-99be0c9f2c33
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 23 Feb 2011 17:28
Last modified: 20 Jul 2019 01:05

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Contributors

Author: M.M.A. Hakim
Author: A. Abuelgasim
Author: L. Tan
Author: C.H. de Groot ORCID iD
Author: W. Redman-White
Author: S. Hall
Author: P. Ashburn

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