Design and fabrication of single electron spin qubits in lithographically defined silicon quantum dots
Design and fabrication of single electron spin qubits in lithographically defined silicon quantum dots
Electron spins in Si quantum dots (QDs) provide an attractive alternative to their GaAs counterparts due to their much longer spin relaxation times[1]. We realise a pair of SOI-based double quantum dot (DQD) transistors facing each other with only a 50nm separation via E-Beam lithography and high resolution HSQ resist. A VLSI compatible fabrication process is implemented allowing for future scalability in quantum systems. We propose a new method of single electron detection verified by Monte-Carlo based simulations making use of the periodicity in the charge stability diagram of a DQD.
112-112
Lin, Y. P.
eef5caca-a4de-4ec2-8625-6431c160dccf
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Alkhalil, F. M.
e235a8d3-4f6f-4940-9d42-2a63967d8019
Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ferguson, A. J.
0c1f28e1-767d-47ca-904f-eadbfb139baa
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
9 June 2011
Lin, Y. P.
eef5caca-a4de-4ec2-8625-6431c160dccf
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Alkhalil, F. M.
e235a8d3-4f6f-4940-9d42-2a63967d8019
Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ferguson, A. J.
0c1f28e1-767d-47ca-904f-eadbfb139baa
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Lin, Y. P., Husain, M. K., Alkhalil, F. M., Chong, H. M. H., Ferguson, A. J. and Mizuta, H.
(2011)
Design and fabrication of single electron spin qubits in lithographically defined silicon quantum dots.
Quantum information processing and communication international conference at ETH Zurich, Zurich.
05 - 09 Sep 2011.
.
Record type:
Conference or Workshop Item
(Poster)
Abstract
Electron spins in Si quantum dots (QDs) provide an attractive alternative to their GaAs counterparts due to their much longer spin relaxation times[1]. We realise a pair of SOI-based double quantum dot (DQD) transistors facing each other with only a 50nm separation via E-Beam lithography and high resolution HSQ resist. A VLSI compatible fabrication process is implemented allowing for future scalability in quantum systems. We propose a new method of single electron detection verified by Monte-Carlo based simulations making use of the periodicity in the charge stability diagram of a DQD.
Text
QIPC_2011_Submitted_Abstract.pdf
- Accepted Manuscript
More information
Published date: 9 June 2011
Additional Information:
Event Dates: September 5-9, 2011
Venue - Dates:
Quantum information processing and communication international conference at ETH Zurich, Zurich, 2011-09-05 - 2011-09-09
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 272666
URI: http://eprints.soton.ac.uk/id/eprint/272666
PURE UUID: 0a0b37bc-4b2d-4f7d-a926-3c80f2602d59
Catalogue record
Date deposited: 15 Aug 2011 08:40
Last modified: 15 Mar 2024 03:30
Export record
Contributors
Author:
Y. P. Lin
Author:
M. K. Husain
Author:
F. M. Alkhalil
Author:
H. M. H. Chong
Author:
A. J. Ferguson
Author:
H. Mizuta
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics