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Design and fabrication of single electron spin qubits in lithographically defined silicon quantum dots

Design and fabrication of single electron spin qubits in lithographically defined silicon quantum dots
Design and fabrication of single electron spin qubits in lithographically defined silicon quantum dots
Electron spins in Si quantum dots (QDs) provide an attractive alternative to their GaAs conterparts due to their much longer spin relaxation times[1]. We realise a pair of SOI-based double quantum dot (DQD) transistors facing each other with only a 50nm separation via E-Beam lithography and high resolution HSQ resist. A VLSI compatible fabrication process is implemented allowing for future scalability in quantum systems. We propose a new method of single electron detection verified by Monte-Carlo based simulations making use of the periodicity in the charge stability diagram of a DQD.
112-112
Lin, Y. P.
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Husain, M. K.
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Alkhalil, F. M.
e235a8d3-4f6f-4940-9d42-2a63967d8019
Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ferguson, A. J.
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Mizuta, H.
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Lin, Y. P.
eef5caca-a4de-4ec2-8625-6431c160dccf
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Alkhalil, F. M.
e235a8d3-4f6f-4940-9d42-2a63967d8019
Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ferguson, A. J.
0c1f28e1-767d-47ca-904f-eadbfb139baa
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9

Lin, Y. P., Husain, M. K., Alkhalil, F. M., Chong, H. M. H., Ferguson, A. J. and Mizuta, H. (2011) Design and fabrication of single electron spin qubits in lithographically defined silicon quantum dots. Quantum information processing and communication international conference at ETH Zurich. 05 - 09 Sep 2011. p. 112 .

Record type: Conference or Workshop Item (Poster)

Abstract

Electron spins in Si quantum dots (QDs) provide an attractive alternative to their GaAs conterparts due to their much longer spin relaxation times[1]. We realise a pair of SOI-based double quantum dot (DQD) transistors facing each other with only a 50nm separation via E-Beam lithography and high resolution HSQ resist. A VLSI compatible fabrication process is implemented allowing for future scalability in quantum systems. We propose a new method of single electron detection verified by Monte-Carlo based simulations making use of the periodicity in the charge stability diagram of a DQD.

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QIPC_2011_Submitted_Abstract.pdf - Accepted Manuscript
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More information

Published date: 9 June 2011
Additional Information: Event Dates: September 5-9, 2011
Venue - Dates: Quantum information processing and communication international conference at ETH Zurich, 2011-09-05 - 2011-09-09
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272666
URI: https://eprints.soton.ac.uk/id/eprint/272666
PURE UUID: 0a0b37bc-4b2d-4f7d-a926-3c80f2602d59
ORCID for H. M. H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 15 Aug 2011 08:40
Last modified: 06 Jun 2018 12:37

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