Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator
Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator
This work presents a Si-based double spin qubit device integrated with a single electron electrometer and a u-ESR. Structural design and analysis was performed using 3D FEM simulations, dynamical analysis of single electron turnstile operation is demonstrated using Monte Carlo single electron simulations [1]. The spin qubits and the electrometer are realized as SOI nanowires (NWs) with an upper metal gate, which induces an inversion layer in the NW channels, and multiple lower Poly-Si control gates to enable single electron turnstile operations. The device was successfully fabricated using e-beam lithography with subsequent pattern transfer by deposition and dry etching.
Alkhalil, F. M.
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Husain, M. K.
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Lin, Y. P.
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Chong, H. M. H.
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Ferguson, A. J.
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Tsuchiya, Y.
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Mizuta, H.
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Alkhalil, F. M.
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Husain, M. K.
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Lin, Y. P.
eef5caca-a4de-4ec2-8625-6431c160dccf
Chong, H. M. H.
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Ferguson, A. J.
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Tsuchiya, Y.
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Mizuta, H.
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Alkhalil, F. M., Husain, M. K., Lin, Y. P., Chong, H. M. H., Ferguson, A. J., Tsuchiya, Y. and Mizuta, H.
(2011)
Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator.
Quantum information processing and communication international conference at ETH Zurich, Zurich.
05 - 09 Sep 2011.
(Submitted)
Record type:
Conference or Workshop Item
(Poster)
Abstract
This work presents a Si-based double spin qubit device integrated with a single electron electrometer and a u-ESR. Structural design and analysis was performed using 3D FEM simulations, dynamical analysis of single electron turnstile operation is demonstrated using Monte Carlo single electron simulations [1]. The spin qubits and the electrometer are realized as SOI nanowires (NWs) with an upper metal gate, which induces an inversion layer in the NW channels, and multiple lower Poly-Si control gates to enable single electron turnstile operations. The device was successfully fabricated using e-beam lithography with subsequent pattern transfer by deposition and dry etching.
Text
QIPC_2011.pdf
- Accepted Manuscript
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Submitted date: 4 September 2011
Additional Information:
Event Dates: September 5-9, 2011
Venue - Dates:
Quantum information processing and communication international conference at ETH Zurich, Zurich, 2011-09-05 - 2011-09-09
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 272690
URI: http://eprints.soton.ac.uk/id/eprint/272690
PURE UUID: 89918cd3-1047-454b-bad2-c7802df8018c
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Date deposited: 21 Aug 2011 23:19
Last modified: 15 Mar 2024 03:30
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Contributors
Author:
F. M. Alkhalil
Author:
M. K. Husain
Author:
Y. P. Lin
Author:
H. M. H. Chong
Author:
A. J. Ferguson
Author:
Y. Tsuchiya
Author:
H. Mizuta
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