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Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator

Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator
Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator
This work presents a Si-based double spin qubit device integrated with a single electron electrometer and a u-ESR. Structural design and analysis was performed using 3D FEM simulations, dynamical analysis of single electron turnstile operation is demonstrated using Monte Carlo single electron simulations [1]. The spin qubits and the electrometer are realized as SOI nanowires (NWs) with an upper metal gate, which induces an inversion layer in the NW channels, and multiple lower Poly-Si control gates to enable single electron turnstile operations. The device was successfully fabricated using e-beam lithography with subsequent pattern transfer by deposition and dry etching.
Alkhalil, F. M.
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Husain, M. K.
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Lin, Y. P.
eef5caca-a4de-4ec2-8625-6431c160dccf
Chong, H. M. H.
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Ferguson, A. J.
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Tsuchiya, Y.
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Mizuta, H.
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Alkhalil, F. M.
e235a8d3-4f6f-4940-9d42-2a63967d8019
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Lin, Y. P.
eef5caca-a4de-4ec2-8625-6431c160dccf
Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ferguson, A. J.
0c1f28e1-767d-47ca-904f-eadbfb139baa
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9

Alkhalil, F. M., Husain, M. K., Lin, Y. P., Chong, H. M. H., Ferguson, A. J., Tsuchiya, Y. and Mizuta, H. (2011) Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator. Quantum information processing and communication international conference at ETH Zurich. 05 - 09 Sep 2011. (Submitted)

Record type: Conference or Workshop Item (Poster)

Abstract

This work presents a Si-based double spin qubit device integrated with a single electron electrometer and a u-ESR. Structural design and analysis was performed using 3D FEM simulations, dynamical analysis of single electron turnstile operation is demonstrated using Monte Carlo single electron simulations [1]. The spin qubits and the electrometer are realized as SOI nanowires (NWs) with an upper metal gate, which induces an inversion layer in the NW channels, and multiple lower Poly-Si control gates to enable single electron turnstile operations. The device was successfully fabricated using e-beam lithography with subsequent pattern transfer by deposition and dry etching.

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QIPC_2011.pdf - Accepted Manuscript
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More information

Submitted date: 4 September 2011
Additional Information: Event Dates: September 5-9, 2011
Venue - Dates: Quantum information processing and communication international conference at ETH Zurich, 2011-09-05 - 2011-09-09
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272690
URI: https://eprints.soton.ac.uk/id/eprint/272690
PURE UUID: 89918cd3-1047-454b-bad2-c7802df8018c
ORCID for H. M. H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 21 Aug 2011 23:19
Last modified: 16 Jun 2018 00:32

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