Design and Analysis of Double Spin Qubits Integrated on Ultra-thin Silicon-on-insulator
Design and Analysis of Double Spin Qubits Integrated on Ultra-thin Silicon-on-insulator
This paper presents the design and analysis of a Sibased integrated spin qubit system on ultrathin silicon-oninsulator. A new design layout is proposed for the double spin qubits co-integrated with a single electron electrometer, a ?-ESR and a nanomagnet. Three dimensional FEM simulations are performed to calculate the capacitance parameters among quantum dots and other building blocks for the proposed structure. Monte Carlo based single electron circuit simulation is then performed to demonstrate single electron transfer operation. The single electron transfer characteristics are analyzed and used to optimize the system structural parameters and layout.
Alkhalil, F. M.
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Chong, H. M. H.
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Ferguson, A. J.
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Tsuchiya, Y.
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Mizuta, H.
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15 September 2010
Alkhalil, F. M.
e235a8d3-4f6f-4940-9d42-2a63967d8019
Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ferguson, A. J.
0c1f28e1-767d-47ca-904f-eadbfb139baa
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Alkhalil, F. M., Chong, H. M. H., Ferguson, A. J., Tsuchiya, Y. and Mizuta, H.
(2010)
Design and Analysis of Double Spin Qubits Integrated on Ultra-thin Silicon-on-insulator.
ESSDERC, Sevilla, Spain.
Record type:
Conference or Workshop Item
(Poster)
Abstract
This paper presents the design and analysis of a Sibased integrated spin qubit system on ultrathin silicon-oninsulator. A new design layout is proposed for the double spin qubits co-integrated with a single electron electrometer, a ?-ESR and a nanomagnet. Three dimensional FEM simulations are performed to calculate the capacitance parameters among quantum dots and other building blocks for the proposed structure. Monte Carlo based single electron circuit simulation is then performed to demonstrate single electron transfer operation. The single electron transfer characteristics are analyzed and used to optimize the system structural parameters and layout.
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Published date: 15 September 2010
Additional Information:
Event Dates: September 2010
Venue - Dates:
ESSDERC, Sevilla, Spain, 2010-09-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 272692
URI: http://eprints.soton.ac.uk/id/eprint/272692
PURE UUID: ca6dfb78-6228-464b-9c68-d604019990d0
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Date deposited: 22 Aug 2011 21:02
Last modified: 15 Mar 2024 03:30
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Contributors
Author:
F. M. Alkhalil
Author:
H. M. H. Chong
Author:
A. J. Ferguson
Author:
Y. Tsuchiya
Author:
H. Mizuta
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