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Design and Analysis of Double Spin Qubits Integrated on Ultra-thin Silicon-on-insulator

Design and Analysis of Double Spin Qubits Integrated on Ultra-thin Silicon-on-insulator
Design and Analysis of Double Spin Qubits Integrated on Ultra-thin Silicon-on-insulator
This paper presents the design and analysis of a Sibased integrated spin qubit system on ultrathin silicon-oninsulator. A new design layout is proposed for the double spin qubits co-integrated with a single electron electrometer, a ?-ESR and a nanomagnet. Three dimensional FEM simulations are performed to calculate the capacitance parameters among quantum dots and other building blocks for the proposed structure. Monte Carlo based single electron circuit simulation is then performed to demonstrate single electron transfer operation. The single electron transfer characteristics are analyzed and used to optimize the system structural parameters and layout.
Alkhalil, F. M.
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Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ferguson, A. J.
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Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Alkhalil, F. M.
e235a8d3-4f6f-4940-9d42-2a63967d8019
Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ferguson, A. J.
0c1f28e1-767d-47ca-904f-eadbfb139baa
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9

Alkhalil, F. M., Chong, H. M. H., Ferguson, A. J., Tsuchiya, Y. and Mizuta, H. (2010) Design and Analysis of Double Spin Qubits Integrated on Ultra-thin Silicon-on-insulator. ESSDERC, Spain.

Record type: Conference or Workshop Item (Poster)

Abstract

This paper presents the design and analysis of a Sibased integrated spin qubit system on ultrathin silicon-oninsulator. A new design layout is proposed for the double spin qubits co-integrated with a single electron electrometer, a ?-ESR and a nanomagnet. Three dimensional FEM simulations are performed to calculate the capacitance parameters among quantum dots and other building blocks for the proposed structure. Monte Carlo based single electron circuit simulation is then performed to demonstrate single electron transfer operation. The single electron transfer characteristics are analyzed and used to optimize the system structural parameters and layout.

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More information

Published date: 15 September 2010
Additional Information: Event Dates: September 2010
Venue - Dates: ESSDERC, Spain, 2010-09-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272692
URI: http://eprints.soton.ac.uk/id/eprint/272692
PURE UUID: ca6dfb78-6228-464b-9c68-d604019990d0
ORCID for H. M. H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 22 Aug 2011 21:02
Last modified: 06 Jun 2018 12:37

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