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Focused Ion Beam Milling and Deposition of Tungsten Contacts on Exfoliated Graphene for Electronic Device Applications

Focused Ion Beam Milling and Deposition of Tungsten Contacts on Exfoliated Graphene for Electronic Device Applications
Focused Ion Beam Milling and Deposition of Tungsten Contacts on Exfoliated Graphene for Electronic Device Applications
We demonstrate a rapid-prototyping method for the fabrication of electrical structures from exfoliated graphene using focused ion beam (FIB) assisted deposition of tungsten and milling. Alignment accuracies of less than 250 nm are achieved without imaging of the graphene using the FIB beam. Parameters for the FIB assisted deposition on graphene have to be controlled exactly to avoid damage to the underlying graphene. Measured channel resistance of 58 k? shows a good electrical contact between deposited tungsten and graphene.
Schmidt, Marek E.
e4489af8-f4ff-4e8d-b7d2-8ca34cb51445
Johari, Z.
190dec04-7378-4eff-a3e4-971b5be706df
Ismail, R.
f1924feb-b458-48a7-8b0b-494270d97c16
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Schmidt, Marek E.
e4489af8-f4ff-4e8d-b7d2-8ca34cb51445
Johari, Z.
190dec04-7378-4eff-a3e4-971b5be706df
Ismail, R.
f1924feb-b458-48a7-8b0b-494270d97c16
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Schmidt, Marek E., Johari, Z., Ismail, R., Mizuta, Hiroshi and Chong, H.M.H. (2011) Focused Ion Beam Milling and Deposition of Tungsten Contacts on Exfoliated Graphene for Electronic Device Applications. Micro and Nano Engineering, Germany. 19 - 23 Sep 2011. (In Press)

Record type: Conference or Workshop Item (Poster)

Abstract

We demonstrate a rapid-prototyping method for the fabrication of electrical structures from exfoliated graphene using focused ion beam (FIB) assisted deposition of tungsten and milling. Alignment accuracies of less than 250 nm are achieved without imaging of the graphene using the FIB beam. Parameters for the FIB assisted deposition on graphene have to be controlled exactly to avoid damage to the underlying graphene. Measured channel resistance of 58 k? shows a good electrical contact between deposited tungsten and graphene.

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More information

Accepted/In Press date: 19 September 2011
Additional Information: Event Dates: 19-23 September 2011
Venue - Dates: Micro and Nano Engineering, Germany, 2011-09-19 - 2011-09-23
Related URLs:
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 272934
URI: https://eprints.soton.ac.uk/id/eprint/272934
PURE UUID: b1548567-3693-4b7e-b2f9-4e2ff7f34983
ORCID for H.M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 17 Oct 2011 08:28
Last modified: 06 Jun 2018 12:37

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Contributors

Author: Marek E. Schmidt
Author: Z. Johari
Author: R. Ismail
Author: Hiroshi Mizuta
Author: H.M.H. Chong ORCID iD

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