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High speed silicon optical modulator with self aligned fabrication process

High speed silicon optical modulator with self aligned fabrication process
High speed silicon optical modulator with self aligned fabrication process
With the imminent commercialisation of silicon photonic devices comes the requirement for a fabrication process capable of high yield and device performance repeatability. The precise alignment of the different elements of a device can be a major fabrication challenge for minimising performance variation or even device failure. In this paper a new design of high speed carrier depletion silicon optical modulator is introduced which features the use of a self-aligned fabrication process to form the pn junction. Experimental results are presented from an initial fabrication run, which has demonstrated a 6dB modulation depth at 10Gbit/s from a 3.5mm long device.
1094-4087
19064-19069
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Milesi, F.
54dc556a-0f45-4cb0-8953-01823104f7c3
Fedeli, J-M.
19c1ac66-4239-45f3-879b-c06653685550
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Milesi, F.
54dc556a-0f45-4cb0-8953-01823104f7c3
Fedeli, J-M.
19c1ac66-4239-45f3-879b-c06653685550

Thomson, D.J., Gardes, F.Y., Reed, G.T., Milesi, F. and Fedeli, J-M. (2010) High speed silicon optical modulator with self aligned fabrication process. Optics Express, 18 (18), 19064-19069. (doi:10.1364/OE.18.019064).

Record type: Article

Abstract

With the imminent commercialisation of silicon photonic devices comes the requirement for a fabrication process capable of high yield and device performance repeatability. The precise alignment of the different elements of a device can be a major fabrication challenge for minimising performance variation or even device failure. In this paper a new design of high speed carrier depletion silicon optical modulator is introduced which features the use of a self-aligned fabrication process to form the pn junction. Experimental results are presented from an initial fabrication run, which has demonstrated a 6dB modulation depth at 10Gbit/s from a 3.5mm long device.

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More information

Published date: 23 August 2010
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 337743
URI: https://eprints.soton.ac.uk/id/eprint/337743
ISSN: 1094-4087
PURE UUID: ce3e5b04-ade2-493f-a3a3-7dd64c741886

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Date deposited: 03 May 2012 13:53
Last modified: 11 Nov 2019 21:03

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Contributors

Author: D.J. Thomson
Author: F.Y. Gardes
Author: G.T. Reed
Author: F. Milesi
Author: J-M. Fedeli

University divisions

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