The University of Southampton
University of Southampton Institutional Repository

A dicing free SOI process for MEMS devices

A dicing free SOI process for MEMS devices
A dicing free SOI process for MEMS devices
This paper presents a full wafer, dicing free, dry release process for MEMS silicon-on-insulator (SOI) sensors and actuators. The developed process is particularly useful for inertial sensors that benefit from a large proof mass, for example accelerometers and gyroscopes. It involves consecutive front and backside deep reactive ion etching (DRIE) of the substrate to define the device features, release holes, and trenches. This is followed by hydrofluoric acid vapor phase etching (HF VPE) to release the proof mass and the handle wafer underneath to allow vertical displacements of the proof mass. The release process also allows the devices to be detached from each other and the substrate without the need of an extra dicing step that may damage the delicate device features or create debris. In the work described here, the process is demonstrated for the full wafer release of a high performance accelerometer with a large proof mass measuring 4 × 7 mm2. The sensor was successfully fabricated with a yield of over 95%
0167-9317
121-129
Sari, Ibrahim
cdcb1265-4a94-4c5a-b8b1-f1ca7e6759d7
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f
Sari, Ibrahim
cdcb1265-4a94-4c5a-b8b1-f1ca7e6759d7
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f

Sari, Ibrahim, Zeimpekis, Ioannis and Kraft, Michael (2012) A dicing free SOI process for MEMS devices. Microelectronic Engineering, 95, 121-129. (doi:10.1016/j.mee.2012.02.004).

Record type: Article

Abstract

This paper presents a full wafer, dicing free, dry release process for MEMS silicon-on-insulator (SOI) sensors and actuators. The developed process is particularly useful for inertial sensors that benefit from a large proof mass, for example accelerometers and gyroscopes. It involves consecutive front and backside deep reactive ion etching (DRIE) of the substrate to define the device features, release holes, and trenches. This is followed by hydrofluoric acid vapor phase etching (HF VPE) to release the proof mass and the handle wafer underneath to allow vertical displacements of the proof mass. The release process also allows the devices to be detached from each other and the substrate without the need of an extra dicing step that may damage the delicate device features or create debris. In the work described here, the process is demonstrated for the full wafer release of a high performance accelerometer with a large proof mass measuring 4 × 7 mm2. The sensor was successfully fabricated with a yield of over 95%

Text
supplementary_data.pdf - Other
Download (279kB)

More information

e-pub ahead of print date: 15 February 2012
Published date: July 2012
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 338801
URI: https://eprints.soton.ac.uk/id/eprint/338801
ISSN: 0167-9317
PURE UUID: 65ff7a81-44a3-461f-829a-ba27e3c034e1

Catalogue record

Date deposited: 17 May 2012 14:32
Last modified: 28 Aug 2019 18:57

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×