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Deposition and characterization of copper indium gallium sulphide thin films fabricated by chemical vapour deposition with metal chloride precursors

Deposition and characterization of copper indium gallium sulphide thin films fabricated by chemical vapour deposition with metal chloride precursors
Deposition and characterization of copper indium gallium sulphide thin films fabricated by chemical vapour deposition with metal chloride precursors
Chemical vapour deposition (CVD) is a widely used method in the optoelectronics and semiconductor industries, producing high purity thin films, in crystalline, amorphous and epitaxial phases. A variety of materials can be produced in this way although for the most part use of the technique has focussed on polysilicon, silicon dioxide, silicon nitride and metallic materials. The advantages of CVD processing, which offers offer superior quality compared to conventional methods such as sputtering or co-evaporation, include conformality, coverage, and stoichiometry control. The process should also be more economical and scalable to large substrates as it can take place at atmospheric pressure rather than under vacuum conditions.
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, C.C., Knight, K. and Hewak, D.W. (2010) Deposition and characterization of copper indium gallium sulphide thin films fabricated by chemical vapour deposition with metal chloride precursors At Photovoltaic Science Application and Technology Conference (PVSAT-6), United Kingdom. 24 - 26 Mar 2010.

Record type: Conference or Workshop Item (Paper)

Abstract

Chemical vapour deposition (CVD) is a widely used method in the optoelectronics and semiconductor industries, producing high purity thin films, in crystalline, amorphous and epitaxial phases. A variety of materials can be produced in this way although for the most part use of the technique has focussed on polysilicon, silicon dioxide, silicon nitride and metallic materials. The advantages of CVD processing, which offers offer superior quality compared to conventional methods such as sputtering or co-evaporation, include conformality, coverage, and stoichiometry control. The process should also be more economical and scalable to large substrates as it can take place at atmospheric pressure rather than under vacuum conditions.

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e-pub ahead of print date: March 2010
Venue - Dates: Photovoltaic Science Application and Technology Conference (PVSAT-6), United Kingdom, 2010-03-24 - 2010-03-26
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 340909
URI: http://eprints.soton.ac.uk/id/eprint/340909
PURE UUID: 32d28d89-6057-4629-acd5-09f2f8f51dad
ORCID for C.C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 09 Jul 2012 15:26
Last modified: 18 Jul 2017 05:41

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Contributors

Author: C.C. Huang ORCID iD
Author: K. Knight
Author: D.W. Hewak ORCID iD

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