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Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology

Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology
Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology
Hydrogen silsesquioxane (HSQ) is a high resolution electron beam resist that offers a high etch resistance and small line edge roughness. In our previous work, we showed that by using this resist we can fabricate very high density double quantum dot (QD) single electron transistors on silicon-on-insulator (SOI) substrates for applications in quantum information processing. We observed that 80% of 144 fabricated devices had dimensional variations of ±5 nm with a standard deviation of 3.4 nm. Here, we report on the functionality of our Si QD devices through electrical measurements and further HSQ process optimisations, which improve the effective side gates control on single electron operation.
Husain, Muhammad Khaled
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Lin, Y.P.
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Alkhalil, Feras
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Perez-Barraza, J.I.
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Lambert, N.
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Williams, D.
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Ferguson, A.J.
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Chong, H.M.H.
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Mizuta, Hiroshi
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Husain, Muhammad Khaled
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Lin, Y.P.
f87decc8-ea4f-42b7-a7ac-bf428a628add
Alkhalil, Feras
69c44665-fdf5-4043-a47a-97578d9c31a1
Perez-Barraza, J.I.
e5c219ca-1f46-4bcb-9714-24f37743a248
Lambert, N.
3004fcf7-1a30-4b10-8024-e527eaddf160
Williams, D.
bcbcd58d-a02f-414c-8d2a-b1b05fead720
Ferguson, A.J.
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Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Husain, Muhammad Khaled, Lin, Y.P., Alkhalil, Feras, Perez-Barraza, J.I., Lambert, N., Williams, D., Ferguson, A.J., Chong, H.M.H. and Mizuta, Hiroshi (2012) Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology. 38th International Conference on Micro and Nano Engineering. 16 - 20 Sep 2012. 1 pp . (Submitted)

Record type: Conference or Workshop Item (Poster)

Abstract

Hydrogen silsesquioxane (HSQ) is a high resolution electron beam resist that offers a high etch resistance and small line edge roughness. In our previous work, we showed that by using this resist we can fabricate very high density double quantum dot (QD) single electron transistors on silicon-on-insulator (SOI) substrates for applications in quantum information processing. We observed that 80% of 144 fabricated devices had dimensional variations of ±5 nm with a standard deviation of 3.4 nm. Here, we report on the functionality of our Si QD devices through electrical measurements and further HSQ process optimisations, which improve the effective side gates control on single electron operation.

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Submitted date: 16 September 2012
Venue - Dates: 38th International Conference on Micro and Nano Engineering, 2012-09-16 - 2012-09-20
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 341480
URI: https://eprints.soton.ac.uk/id/eprint/341480
PURE UUID: 22457ecd-0f6a-4179-a269-3a87360fde00
ORCID for H.M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 24 Jul 2012 14:43
Last modified: 06 Jun 2018 12:37

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Contributors

Author: Muhammad Khaled Husain
Author: Y.P. Lin
Author: Feras Alkhalil
Author: J.I. Perez-Barraza
Author: N. Lambert
Author: D. Williams
Author: A.J. Ferguson
Author: H.M.H. Chong ORCID iD
Author: Hiroshi Mizuta

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