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Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology

Record type: Conference or Workshop Item (Poster)

Hydrogen silsesquioxane (HSQ) is a high resolution electron beam resist that offers a high etch resistance and small line edge roughness. In our previous work, we showed that by using this resist we can fabricate very high density double quantum dot (QD) single electron transistors on silicon-on-insulator (SOI) substrates for applications in quantum information processing. We observed that 80% of 144 fabricated devices had dimensional variations of ±5 nm with a standard deviation of 3.4 nm. Here, we report on the functionality of our Si QD devices through electrical measurements and further HSQ process optimisations, which improve the effective side gates control on single electron operation.

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Citation

Husain, Muhammad Khaled, Lin, Y.P., Alkhalil, Feras, Perez-Barraza, J.I., Lambert, N., Williams, D., Ferguson, A.J., Chong, H.M.H. and Mizuta, Hiroshi (2012) Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology At 38th International Conference on Micro and Nano Engineering. 16 - 20 Sep 2012. 1 pp.

More information

Submitted date: 16 September 2012
Venue - Dates: 38th International Conference on Micro and Nano Engineering, 2012-09-16 - 2012-09-20
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 341480
URI: http://eprints.soton.ac.uk/id/eprint/341480
PURE UUID: 22457ecd-0f6a-4179-a269-3a87360fde00

Catalogue record

Date deposited: 24 Jul 2012 14:43
Last modified: 18 Jul 2017 05:35

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Contributors

Author: Muhammad Khaled Husain
Author: Y.P. Lin
Author: Feras Alkhalil
Author: J.I. Perez-Barraza
Author: N. Lambert
Author: D. Williams
Author: A.J. Ferguson
Author: H.M.H. Chong
Author: Hiroshi Mizuta

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