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Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process

Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process
Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process
Hydrogen silsesquioxane (HSQ) is a high resolution negative-tone electron beam resist allowing for direct transfer of nanostructures into silicon-on-insulator. Using this resist for electron beam lithography, we fabricate high density lithographically defined Silicon double quantum dot (QD) transistors. We show that our approach is compatible with very large scale integration, allowing for parallel fabrication of up to 144 scalable devices. HSQ process optimisation allowed for realisation of reproducible QD dimensions of 50 nm and tunnel junction down to 25 nm. We observed that 80% of the fabricated devices had dimensional variations of less than 5 nm. These are the smallest high density double QD transistors achieved to date. Single electron simulations combined with preliminary electrical characterisations justify the reliability of our device and process.
386-390
Lin, Y. P.
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Husain, M. K.
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Alkhalil, F. M.
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Lambert, N.
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Perez-Barraza, J.
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Tsuchiya, Y.
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Ferguson, A. J.
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Chong, H. M. H.
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Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Lin, Y. P.
eef5caca-a4de-4ec2-8625-6431c160dccf
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Alkhalil, F. M.
e235a8d3-4f6f-4940-9d42-2a63967d8019
Lambert, N.
3004fcf7-1a30-4b10-8024-e527eaddf160
Perez-Barraza, J.
62a794d1-1502-4735-8f04-36930ee740da
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Ferguson, A. J.
0c1f28e1-767d-47ca-904f-eadbfb139baa
Chong, H. M. H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9

Lin, Y. P., Husain, M. K. and Alkhalil, F. M. et al. (2012) Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process. [in special issue: MNE2011] Microelectronics Engineering, 98 (386-390), 386-390. (doi:10.1016/j.mee.2012.07.011).

Record type: Article

Abstract

Hydrogen silsesquioxane (HSQ) is a high resolution negative-tone electron beam resist allowing for direct transfer of nanostructures into silicon-on-insulator. Using this resist for electron beam lithography, we fabricate high density lithographically defined Silicon double quantum dot (QD) transistors. We show that our approach is compatible with very large scale integration, allowing for parallel fabrication of up to 144 scalable devices. HSQ process optimisation allowed for realisation of reproducible QD dimensions of 50 nm and tunnel junction down to 25 nm. We observed that 80% of the fabricated devices had dimensional variations of less than 5 nm. These are the smallest high density double QD transistors achieved to date. Single electron simulations combined with preliminary electrical characterisations justify the reliability of our device and process.

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Accepted/In Press date: 24 July 2012
Published date: 28 August 2012
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 341482
URI: https://eprints.soton.ac.uk/id/eprint/341482
PURE UUID: dbb4de81-0571-4f37-9427-4109b86eb653
ORCID for H. M. H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

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Date deposited: 24 Jul 2012 14:43
Last modified: 20 Jul 2019 00:51

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