Pulse-induced resistive and capacitive switching in TiO2 thin film devices
Pulse-induced resistive and capacitive switching in TiO2 thin film devices
In this study we exploit the non-zero crossing current-voltage characteristics exhibited by nanoscale TiO2 based solid-state memristors. We demonstrate that the effective resistance and capacitance of such two terminal devices can be modulated simultaneously by appropriate voltage pulsing. Our results prove that both resistive and capacitive switching arise naturally in nanoscale Pt/TiO2/Pt devices under an external bias, this behaviour being governed by the formation/disruption of conductive filaments through the TiO2 thin film.
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Khiat, A.
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Li, Q.
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Berdan, R.
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Prodromakis, T.
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December 2013
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Li, Q.
54e51d2b-808c-42f2-95bb-62b4110df4dd
Berdan, R.
082f1f5b-eaee-48a6-b728-414fc65f72bd
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Salaoru, I., Khiat, A., Li, Q., Berdan, R. and Prodromakis, T.
(2013)
Pulse-induced resistive and capacitive switching in TiO2 thin film devices.
Applied Physics Letters, 103 (24).
Abstract
In this study we exploit the non-zero crossing current-voltage characteristics exhibited by nanoscale TiO2 based solid-state memristors. We demonstrate that the effective resistance and capacitance of such two terminal devices can be modulated simultaneously by appropriate voltage pulsing. Our results prove that both resistive and capacitive switching arise naturally in nanoscale Pt/TiO2/Pt devices under an external bias, this behaviour being governed by the formation/disruption of conductive filaments through the TiO2 thin film.
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Published date: December 2013
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 359989
URI: http://eprints.soton.ac.uk/id/eprint/359989
ISSN: 0003-6951
PURE UUID: 9eea2bdb-0779-410f-9b1c-b003fe3e47ab
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Date deposited: 20 Nov 2013 14:16
Last modified: 14 Mar 2024 15:31
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Author:
I. Salaoru
Author:
A. Khiat
Author:
Q. Li
Author:
R. Berdan
Author:
T. Prodromakis
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