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Multi-layer graphene FET compact circuit-level model with temperature effects

Multi-layer graphene FET compact circuit-level model with temperature effects
Multi-layer graphene FET compact circuit-level model with temperature effects
This paper presents a circuit-level model of a dual-gate bilayer and four layer graphene field effect transistor (GFET). The model provides an accurate estimation of the conductance at the charge neutrality point (CNP). At the CNP the device has its maximum resistance, at which the model is validated against experimental data of the device off-current for a range of electric fields perpendicular to the channel. The model shows a good agreement for validations carried out at constant and varying temperatures. Using the general Schottky equation, the model estimates the amount of bandgap opening created by the application of an electric field. Also the model shows good agreement when validated against experiment for the channel output conductance against varying gate voltage for both a bilayer and four layer graphene channel.
805-813
Umoh, Ime Jarlath
84f73e64-ce35-4b13-96d1-e54b553822ff
Kazmierski, Tom
a97d7958-40c3-413f-924d-84545216092a
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
Umoh, Ime Jarlath
84f73e64-ce35-4b13-96d1-e54b553822ff
Kazmierski, Tom
a97d7958-40c3-413f-924d-84545216092a
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d

Umoh, Ime Jarlath, Kazmierski, Tom and Al-Hashimi, Bashir (2014) Multi-layer graphene FET compact circuit-level model with temperature effects. IEEE Transactions on Nanotechnology, 13 (4), 805-813. (doi:10.1109/TNANO.2014.2323129).

Record type: Article

Abstract

This paper presents a circuit-level model of a dual-gate bilayer and four layer graphene field effect transistor (GFET). The model provides an accurate estimation of the conductance at the charge neutrality point (CNP). At the CNP the device has its maximum resistance, at which the model is validated against experimental data of the device off-current for a range of electric fields perpendicular to the channel. The model shows a good agreement for validations carried out at constant and varying temperatures. Using the general Schottky equation, the model estimates the amount of bandgap opening created by the application of an electric field. Also the model shows good agreement when validated against experiment for the channel output conductance against varying gate voltage for both a bilayer and four layer graphene channel.

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e-pub ahead of print date: 12 May 2014
Organisations: Electronics & Computer Science

Identifiers

Local EPrints ID: 366757
URI: https://eprints.soton.ac.uk/id/eprint/366757
PURE UUID: f3563ebb-3e7a-4f8b-a9c7-2ffa58ab1feb

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Date deposited: 09 Jul 2014 14:15
Last modified: 19 Jul 2019 21:08

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Contributors

Author: Ime Jarlath Umoh
Author: Tom Kazmierski
Author: Bashir Al-Hashimi

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