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Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS

Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS
Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS
Optical modulators based upon carrier depletion have proven to be effective at achieving high speed operation in silicon. However, when incorporated into Mach-Zehnder Interferometer structures they require electronic driver amplifiers to provide peak to peak drive voltages of a few volts in order to achieve a large extinction ratio. For minimal performance degradation caused by the electrical connection between the driver and the modulator monolithic integration in the front end of the process is the preferred integration route. The formation of electronic driver amplifiers in BiCMOS is advantageous over CMOS in terms of achievable performance versus cost. In this work the first monolithic photonic integration in the electronic front-end of a high-performance BiCMOS technology process is demonstrated. Modulation at 10 Gbit/s is demonstrated with an extinction ratio >8 dB. The potential scalability of both the silicon photonic and BiCMOS elements make this technology an attractive prospect for the future.
SiGe, integration, modulator, silicon modulator, driver, BiCMOS, front end, silicon photonics
1863-8880
180-187
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Porte, Henri
73512290-e35f-460e-8aa8-e7d54f7f0687
Goll, Bernhard
a15e9bf5-5cdf-4f30-a2d3-d61714cb582d
Knoll, Dieter
b9e37d07-6517-48e3-96d6-51547fbf4db7
Lischke, Stefan
d9665132-10c2-410e-befc-27ba8df964ca
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Hu, Youfang
38fe48b3-1609-4834-ad54-dc823e3a98b3
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Zimmermann, Horst
f94831b8-a04a-4d82-baec-286043e86494
Zimmermann, Lars
2580afa4-04c0-40ad-8707-693673cb9113
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Porte, Henri
73512290-e35f-460e-8aa8-e7d54f7f0687
Goll, Bernhard
a15e9bf5-5cdf-4f30-a2d3-d61714cb582d
Knoll, Dieter
b9e37d07-6517-48e3-96d6-51547fbf4db7
Lischke, Stefan
d9665132-10c2-410e-befc-27ba8df964ca
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Hu, Youfang
38fe48b3-1609-4834-ad54-dc823e3a98b3
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Zimmermann, Horst
f94831b8-a04a-4d82-baec-286043e86494
Zimmermann, Lars
2580afa4-04c0-40ad-8707-693673cb9113

Thomson, David J., Porte, Henri, Goll, Bernhard, Knoll, Dieter, Lischke, Stefan, Gardes, Frederic, Hu, Youfang, Reed, Graham T., Zimmermann, Horst and Zimmermann, Lars (2014) Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS. Laser & Photonics Reviews, 8 (1), 180-187. (doi:10.1002/lpor.201300116).

Record type: Article

Abstract

Optical modulators based upon carrier depletion have proven to be effective at achieving high speed operation in silicon. However, when incorporated into Mach-Zehnder Interferometer structures they require electronic driver amplifiers to provide peak to peak drive voltages of a few volts in order to achieve a large extinction ratio. For minimal performance degradation caused by the electrical connection between the driver and the modulator monolithic integration in the front end of the process is the preferred integration route. The formation of electronic driver amplifiers in BiCMOS is advantageous over CMOS in terms of achievable performance versus cost. In this work the first monolithic photonic integration in the electronic front-end of a high-performance BiCMOS technology process is demonstrated. Modulation at 10 Gbit/s is demonstrated with an extinction ratio >8 dB. The potential scalability of both the silicon photonic and BiCMOS elements make this technology an attractive prospect for the future.

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More information

e-pub ahead of print date: 25 November 2013
Published date: January 2014
Keywords: SiGe, integration, modulator, silicon modulator, driver, BiCMOS, front end, silicon photonics
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 367430
URI: https://eprints.soton.ac.uk/id/eprint/367430
ISSN: 1863-8880
PURE UUID: 5060ad92-a6b9-47fb-a10e-6d8cbc98c110

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Date deposited: 30 Jul 2014 08:30
Last modified: 02 Dec 2019 20:42

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Contributors

Author: Henri Porte
Author: Bernhard Goll
Author: Dieter Knoll
Author: Stefan Lischke
Author: Frederic Gardes
Author: Youfang Hu
Author: Graham T. Reed
Author: Horst Zimmermann
Author: Lars Zimmermann

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