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Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes
Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes
A detailed study of the electrical transport properties of Pd contacted carbon nanotube (CNT)/Si heterojunctions is presented. The CNT with a diameter ranging from 1.2 to 2.0?nm on n-type Si substrates showed rectifying behavior with the ideality factor of 1.1–2.2 and turn on voltage of 0.05–0.34?V. The current-voltage characteristics of the CNT/n+-Si diodes were investigated in the temperature range from 50 to 300?K. The transition from thermionic emission to tunneling process was seen in the forward current around 150?K and the Schottky barrier height at Pd/CNT interface is estimated to be 0.3–0.5?eV.
0003-6951
1-3
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Shimpo, F.
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Kawashima, T.
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Ayre, G.N.
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Smith, D.C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Shimpo, F.
71a85a54-0270-4c7b-b22c-f2b2dd700a60
Kawashima, T.
2f7dfa72-9b3e-4b3d-8dc7-12cdfad05cfd
Ayre, G.N.
0a7c003b-00c1-4412-bd40-03005e7310c2
Smith, D.C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Uchino, T., Shimpo, F., Kawashima, T., Ayre, G.N., Smith, D.C., de Groot, C.H. and Ashburn, P. (2014) Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes. Applied Physics Letters, 103 (19), 1-3. (doi:10.1063/1.4829155).

Record type: Article

Abstract

A detailed study of the electrical transport properties of Pd contacted carbon nanotube (CNT)/Si heterojunctions is presented. The CNT with a diameter ranging from 1.2 to 2.0?nm on n-type Si substrates showed rectifying behavior with the ideality factor of 1.1–2.2 and turn on voltage of 0.05–0.34?V. The current-voltage characteristics of the CNT/n+-Si diodes were investigated in the temperature range from 50 to 300?K. The transition from thermionic emission to tunneling process was seen in the forward current around 150?K and the Schottky barrier height at Pd/CNT interface is estimated to be 0.3–0.5?eV.

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e-pub ahead of print date: November 2013
Published date: 2 January 2014
Organisations: Physics & Astronomy, Electronics & Computer Science

Identifiers

Local EPrints ID: 367546
URI: https://eprints.soton.ac.uk/id/eprint/367546
ISSN: 0003-6951
PURE UUID: 0cbb6e20-1224-4406-8309-5ba6f9799a2c
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 31 Jul 2014 14:03
Last modified: 20 Jul 2019 01:05

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Contributors

Author: T. Uchino
Author: F. Shimpo
Author: T. Kawashima
Author: G.N. Ayre
Author: D.C. Smith
Author: C.H. de Groot ORCID iD
Author: P. Ashburn

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