Locally erasable couplers for optical device testing in silicon on insulator
Locally erasable couplers for optical device testing in silicon on insulator
Wafer scale testing is critical to reducing production costs and increasing production yield. Here we report a method that allows testing of individual optical components within a complex optical integrated circuit. The method is based on diffractive grating couplers, fabricated using lattice damage induced by ion implantation of germanium. These gratings can be erased via localised laser annealing, which is shown to reduce the outcoupling efficiency by over 20 dB after the device testing is completed. Laser annealing was achieved by employing a CW laser, operating at visible wavelengths thus reducing equipment costs and allowing annealing through thick oxide claddings. The process used also retains CMOS compatibility.
2248-2253
Topley, R.P.
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Martinez-Jimenez, G.
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O'Faolain, L.
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Healy, N.
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Mailis, S.
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Thomson, D.J.
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Gardes, F.Y.
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Peacock, A.C.
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Payne, D.N.R.
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Mashanovich, G.Z.
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Reed, G.T.
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15 June 2014
Topley, R.P.
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Martinez-Jimenez, G.
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O'Faolain, L.
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Healy, N.
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Mailis, S.
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Thomson, D.J.
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Gardes, F.Y.
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Peacock, A.C.
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Payne, D.N.R.
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Mashanovich, G.Z.
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Reed, G.T.
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Topley, R.P., Martinez-Jimenez, G., O'Faolain, L., Healy, N., Mailis, S., Thomson, D.J., Gardes, F.Y., Peacock, A.C., Payne, D.N.R., Mashanovich, G.Z. and Reed, G.T.
(2014)
Locally erasable couplers for optical device testing in silicon on insulator.
Journal of Lightwave Technology, 32 (12), .
(doi:10.1109/JLT.2014.2324018).
Abstract
Wafer scale testing is critical to reducing production costs and increasing production yield. Here we report a method that allows testing of individual optical components within a complex optical integrated circuit. The method is based on diffractive grating couplers, fabricated using lattice damage induced by ion implantation of germanium. These gratings can be erased via localised laser annealing, which is shown to reduce the outcoupling efficiency by over 20 dB after the device testing is completed. Laser annealing was achieved by employing a CW laser, operating at visible wavelengths thus reducing equipment costs and allowing annealing through thick oxide claddings. The process used also retains CMOS compatibility.
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e-pub ahead of print date: 21 May 2014
Published date: 15 June 2014
Organisations:
Optoelectronics Research Centre, Electronics & Computer Science
Identifiers
Local EPrints ID: 367583
URI: http://eprints.soton.ac.uk/id/eprint/367583
ISSN: 0733-8724
PURE UUID: 5ddd660c-8dbe-4958-ba4f-6ec309433c65
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Date deposited: 01 Aug 2014 13:11
Last modified: 29 Oct 2024 02:45
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Contributors
Author:
R.P. Topley
Author:
G. Martinez-Jimenez
Author:
L. O'Faolain
Author:
N. Healy
Author:
S. Mailis
Author:
D.J. Thomson
Author:
F.Y. Gardes
Author:
A.C. Peacock
Author:
D.N.R. Payne
Author:
G.Z. Mashanovich
Author:
G.T. Reed
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