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Stochastic switching of TiO2-based memristive devices with identical initial memory states

Stochastic switching of TiO2-based memristive devices with identical initial memory states
Stochastic switching of TiO2-based memristive devices with identical initial memory states
In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution.
1931-7573
293
Li, Qingjiang
2e8bdc5d-3e40-4566-a0ef-5d518a72ba89
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Salaoru, Iulia
bfec063f-78ec-471f-8139-eb4e4787fb21
Xu, Hui
552bd821-498f-49c0-b384-053c0da90b58
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Li, Qingjiang
2e8bdc5d-3e40-4566-a0ef-5d518a72ba89
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Salaoru, Iulia
bfec063f-78ec-471f-8139-eb4e4787fb21
Xu, Hui
552bd821-498f-49c0-b384-053c0da90b58
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Li, Qingjiang, Khiat, Ali, Salaoru, Iulia, Xu, Hui and Prodromakis, Themistoklis (2014) Stochastic switching of TiO2-based memristive devices with identical initial memory states. Nanoscale Research Letters, 9 (1), 293. (PMID:24994953)

Record type: Article

Abstract

In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution.

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Published date: June 2014
Organisations: Electronics & Computer Science

Identifiers

Local EPrints ID: 369279
URI: https://eprints.soton.ac.uk/id/eprint/369279
ISSN: 1931-7573
PURE UUID: 7b622e99-21e7-4873-a2f4-37dddd8cd1ff
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 23 Sep 2014 11:09
Last modified: 06 Jun 2018 12:24

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Contributors

Author: Qingjiang Li
Author: Ali Khiat
Author: Iulia Salaoru
Author: Hui Xu

University divisions

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