Coexistence of memory-resistance and memory-capacitance in TiO2 solid state devices
Coexistence of memory-resistance and memory-capacitance in TiO2 solid state devices
This work exploits the coexistence of both resistance and capacitance memory effects in TiO2 based two terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicate the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these states modulations occur due to bias induced reduction of the TiOx active layer via the displacement of ionic species.
ReRAM, memristor, memcapacitor, TiO2, nanoscale
1-7
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Li, Qingjiang
2e8bdc5d-3e40-4566-a0ef-5d518a72ba89
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
4 October 2014
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Li, Qingjiang
2e8bdc5d-3e40-4566-a0ef-5d518a72ba89
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Salaoru, I., Li, Qingjiang, Khiat, A. and Prodromakis, T.
(2014)
Coexistence of memory-resistance and memory-capacitance in TiO2 solid state devices.
Nanoscale Research Letters, 9 (552), .
(doi:10.1186/1556-276X-9-552).
Abstract
This work exploits the coexistence of both resistance and capacitance memory effects in TiO2 based two terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicate the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these states modulations occur due to bias induced reduction of the TiOx active layer via the displacement of ionic species.
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1556-276X-9-552.pdf
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More information
Accepted/In Press date: 23 September 2014
Published date: 4 October 2014
Keywords:
ReRAM, memristor, memcapacitor, TiO2, nanoscale
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 369472
URI: http://eprints.soton.ac.uk/id/eprint/369472
ISSN: 1931-7573
PURE UUID: 6b0f0c9f-cc4e-42e5-9d06-42411c616ca1
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Date deposited: 02 Oct 2014 11:38
Last modified: 14 Mar 2024 18:04
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Contributors
Author:
I. Salaoru
Author:
Qingjiang Li
Author:
A. Khiat
Author:
T. Prodromakis
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