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Coexistence of memory-resistance and memory-capacitance in TiO2 solid state devices

Coexistence of memory-resistance and memory-capacitance in TiO2 solid state devices
Coexistence of memory-resistance and memory-capacitance in TiO2 solid state devices
This work exploits the coexistence of both resistance and capacitance memory effects in TiO2 based two terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicate the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these states modulations occur due to bias induced reduction of the TiOx active layer via the displacement of ionic species.
ReRAM, memristor, memcapacitor, TiO2, nanoscale
1931-7573
1-7
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Li, Qingjiang
2e8bdc5d-3e40-4566-a0ef-5d518a72ba89
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Li, Qingjiang
2e8bdc5d-3e40-4566-a0ef-5d518a72ba89
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf

Salaoru, I., Li, Qingjiang, Khiat, A. and Prodromakis, T. (2014) Coexistence of memory-resistance and memory-capacitance in TiO2 solid state devices. Nanoscale Research Letters, 9 (552), 1-7. (doi:10.1186/1556-276X-9-552).

Record type: Article

Abstract

This work exploits the coexistence of both resistance and capacitance memory effects in TiO2 based two terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicate the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these states modulations occur due to bias induced reduction of the TiOx active layer via the displacement of ionic species.

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More information

Accepted/In Press date: 23 September 2014
Published date: 4 October 2014
Keywords: ReRAM, memristor, memcapacitor, TiO2, nanoscale
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 369472
URI: https://eprints.soton.ac.uk/id/eprint/369472
ISSN: 1931-7573
PURE UUID: 6b0f0c9f-cc4e-42e5-9d06-42411c616ca1
ORCID for T. Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 02 Oct 2014 11:38
Last modified: 06 Jun 2018 12:24

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Contributors

Author: I. Salaoru
Author: Qingjiang Li
Author: A. Khiat
Author: T. Prodromakis ORCID iD

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