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Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulator

Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulator
Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulator
In this paper we focus on developing an efficient method to obtain a crystalline SiGe layer on top of an insulator. The method is aimed at enabling the fabrication of different concentration of crystalline SiGe alloy through structure engineering. This technique could enable the alloy composition to be different by design across a single wafer by using a single Germanium deposition step.
1938-5862
155-157
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Nedeljković, Milos
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Nedeljković, Milos
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139

Littlejohns, Callum, Gardes, Frederic Y., Nedeljković, Milos, Mashanovich, Goran Z. and Reed, Graham T. (2014) Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulator. ECS Transactions, 64 (6), 155-157. (doi:10.1149/06406.0155ecst).

Record type: Article

Abstract

In this paper we focus on developing an efficient method to obtain a crystalline SiGe layer on top of an insulator. The method is aimed at enabling the fabrication of different concentration of crystalline SiGe alloy through structure engineering. This technique could enable the alloy composition to be different by design across a single wafer by using a single Germanium deposition step.

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More information

Published date: 12 August 2014
Organisations: Optoelectronics Research Centre, Photonic Systems Circuits & Sensors

Identifiers

Local EPrints ID: 375140
URI: https://eprints.soton.ac.uk/id/eprint/375140
ISSN: 1938-5862
PURE UUID: fdf42837-7346-4e50-9590-914de50b8c9d
ORCID for Milos Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911

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Date deposited: 13 Mar 2015 15:16
Last modified: 03 Dec 2019 01:35

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Contributors

Author: Callum Littlejohns
Author: Milos Nedeljković ORCID iD
Author: Graham T. Reed

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