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Silicon-germanium composition engineering for next generation multilayer devices and systems

Silicon-germanium composition engineering for next generation multilayer devices and systems
Silicon-germanium composition engineering for next generation multilayer devices and systems
We report a method of engineering constant composition, single crystal, defect free SiGe-on-insulator grown by a rapid melt growth technique using tailored tree-like structures. Branches emanating from the main SiGe strip act as Silicon “reservoirs” to prevent the usual gradation of the alloy composition. This technique enables multiple SiGe strips to be grown using the same single generic Ge deposition step, each with a different composition determined by the structural design. Using this technique, we envisage a silicon photonics platform for on-chip optical communications whereby both modulators and detectors can be fabricated with the same device design and therefore the same simple fabrication steps. This can be realised by exploiting the rapid melt growth SiGe composition engineering detailed in this paper to tune the bandgap of electro-absorption modulators for multi-channel links using wavelength division multiplexing, whilst simultaneously forming pure Ge photodetectors. This technology could open the way for a new multilayer photonic architecture or for extremely low power density, multi-channel on-chip optical communications by integrating the concept with the cascaded photonic crystal architecture demonstrated by Debnath et al.
978-1-4799-2282-6
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Nedeljković, Milos
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Nedeljković, Milos
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2

Littlejohns, Callum, Nedeljković, Milos, Mashanovich, Goran Z., Reed, Graham T. and Gardes, Frederic Y. (2014) Silicon-germanium composition engineering for next generation multilayer devices and systems. Group IV Photonics (GFP), 2014 IEEE 11th International Conference on, France. 27 - 29 Aug 2014. 2 pp . (doi:10.1109/Group4.2014.6962055).

Record type: Conference or Workshop Item (Paper)

Abstract

We report a method of engineering constant composition, single crystal, defect free SiGe-on-insulator grown by a rapid melt growth technique using tailored tree-like structures. Branches emanating from the main SiGe strip act as Silicon “reservoirs” to prevent the usual gradation of the alloy composition. This technique enables multiple SiGe strips to be grown using the same single generic Ge deposition step, each with a different composition determined by the structural design. Using this technique, we envisage a silicon photonics platform for on-chip optical communications whereby both modulators and detectors can be fabricated with the same device design and therefore the same simple fabrication steps. This can be realised by exploiting the rapid melt growth SiGe composition engineering detailed in this paper to tune the bandgap of electro-absorption modulators for multi-channel links using wavelength division multiplexing, whilst simultaneously forming pure Ge photodetectors. This technology could open the way for a new multilayer photonic architecture or for extremely low power density, multi-channel on-chip optical communications by integrating the concept with the cascaded photonic crystal architecture demonstrated by Debnath et al.

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More information

Accepted/In Press date: 28 August 2014
Published date: 29 August 2014
Venue - Dates: Group IV Photonics (GFP), 2014 IEEE 11th International Conference on, France, 2014-08-27 - 2014-08-29
Organisations: Optoelectronics Research Centre, Photonic Systems Circuits & Sensors

Identifiers

Local EPrints ID: 375141
URI: https://eprints.soton.ac.uk/id/eprint/375141
ISBN: 978-1-4799-2282-6
PURE UUID: 2c91abc2-4af9-4c86-8d02-fe075935bde6
ORCID for Milos Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911

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Date deposited: 13 Mar 2015 15:37
Last modified: 20 Jul 2019 00:37

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Contributors

Author: Callum Littlejohns
Author: Milos Nedeljković ORCID iD
Author: Graham T. Reed

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